Fukumoto Michitaka, Nakao Shoichiro, Shigematsu Kei, Ogawa Daisuke, Morikawa Kazuo, Hirose Yasushi, Hasegawa Tetsuya
Department of Chemistry, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8654, Japan.
Kanagawa Institute of Industrial Science and Technology (KISTEC), 705-1 Shimoimaizumi, Ebina, Kanagawa, 243-0435, Japan.
Sci Rep. 2020 Apr 22;10(1):6844. doi: 10.1038/s41598-020-63800-3.
Achieving high mobility in SnO, which is a typical wide gap oxide semiconductor, has been pursued extensively for device applications such as field effect transistors, gas sensors, and transparent electrodes. In this study, we investigated the transport properties of lightly Ta-doped SnO (SnTaO, TTO) thin films epitaxially grown on TiO (001) substrates by pulsed laser deposition. The carrier density (n) of the TTO films was systematically controlled by x. Optimized TTO (x = 3 × 10) films with n ~ 1 × 10 cm exhibited a very high Hall mobility (μ) of 130 cmVs at room temperature, which is the highest among SnO films thus far reported. The μ value coincided well with the intrinsic limit of μ calculated on the assumption that only phonon and ionized impurities contribute to the carrier scattering. The suppressed grain-boundary scattering might be explained by the reduced density of the {101} crystallographic shear planes.
在典型的宽禁带氧化物半导体SnO中实现高迁移率，已被广泛用于诸如场效应晶体管、气体传感器和透明电极等器件应用。在本研究中，我们研究了通过脉冲激光沉积在TiO(001)衬底上外延生长的轻掺杂Ta的SnO(SnTaO，TTO)薄膜的输运性质。TTO薄膜的载流子密度(n)通过x进行系统控制。优化后的TTO(x = 3×10)薄膜，n ~ 1×10 cm，在室温下表现出130 cm²V⁻¹s⁻¹的非常高的霍尔迁移率(μ)，这是迄今为止报道的SnO薄膜中最高的。该μ值与在仅假设声子和电离杂质对载流子散射有贡献的情况下计算出的μ的本征极限非常吻合。晶界散射的抑制可能是由{101}晶体学剪切面密度的降低来解释的。
