Sun Jia, Lu Aixia, Wang Liping, Hu Yu, Wan Qing
Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, People's Republic of China.
Nanotechnology. 2009 Aug 19;20(33):335204. doi: 10.1088/0957-4484/20/33/335204. Epub 2009 Jul 28.
Transparent thin-film transistors with bottom-gate figure are fabricated by sputter deposition of an Sb-doped SnO2 nanocrystal channel layer onto glass substrates at room temperature with plasma-enhanced chemical vapor deposition SiO2 gate dielectrics and sputtering ITO electrodes. These devices exhibit high-performance n-type transistor characteristics operating in depletion mode with an ultrahigh field-effect mobility of 158 cm(2) V(-1) s(-1). The current on/off ratio and the subthreshold swing are found to be 3 x 10(4) and 0.2 V/decade, respectively. These achievements demonstrate that SnO2-based nanocrystal thin-film transistors are promising for high-speed transparent and flexible electronics on temperature-sensitive substrates.
通过在室温下将掺锑的二氧化锡纳米晶体沟道层溅射沉积到玻璃基板上，采用等离子体增强化学气相沉积二氧化硅栅极电介质和溅射铟锡氧化物（ITO）电极，制备出具有底栅结构的透明薄膜晶体管。这些器件展现出高性能的n型晶体管特性，在耗尽模式下工作，具有158 cm² V⁻¹ s⁻¹的超高场效应迁移率。发现电流开/关比和亚阈值摆幅分别为3×10⁴和0.2 V/十倍频程。这些成果表明，基于二氧化锡的纳米晶体薄膜晶体管在对温度敏感的基板上用于高速透明和柔性电子器件方面具有广阔前景。
