Li Deng-Bing, Song Zhaoning, Bista Sandip S, Alfadhili Fadhil K, Awni Rasha A, Shrestha Niraj, Rhiannon DeMilt, Phillips Adam B, Heben Michael J, Ellingson Randy J, Yan Feng, Yan Yanfa
Department of Physics and Astronomy, and Wright Center for Photovoltaics Innovation and Commercialization (PVIC), University of Toledo, Toledo, OH 43606, USA.
Ottawa Hills Junior/senior high school, Ottawa Hills Local Schools, Ottawa Hills, OH 43606, USA.
Materials (Basel). 2020 Apr 24;13(8):1991. doi: 10.3390/ma13081991.
The replacement of traditional CdS with zinc magnesium oxide (ZMO) has been demonstrated as being helpful to boost power conversion efficiency of cadmium telluride (CdTe) solar cells to over 18%, due to the reduced interface recombination and parasitic light absorption by the buffer layer. However, due to the atmosphere sensitivity of ZMO film, the post treatments of ZMO/CdTe stacks, including CdCl treatment, back contact deposition, etc., which are critical for high-performance CdTe solar cells became crucial challenges. To realize the full potential of the ZMO buffer layer, plenty of investigations need to be accomplished. Here, copper thiocyanate (CuSCN) is demonstrated to be a suitable back-contact material with multi-advantages for ZMO/CdTe solar cells. Particularly, ammonium hydroxide as the solvent for CuSCN deposition shows no detrimental impact on the ZMO layer during the post heat treatment. The post annealing temperature as well as the thickness of CuSCN films are investigated. Finally, a champion power conversion efficiency of 16.7% is achieved with an open-circuit voltage of 0.857 V, a short-circuit current density of 26.2 mA/cm, and a fill factor of 74.0%.
用氧化锌镁(ZMO)替代传统的硫化镉(CdS)已被证明有助于将碲化镉(CdTe)太阳能电池的功率转换效率提高到18%以上,这是由于缓冲层的界面复合减少和寄生光吸收降低。然而,由于ZMO薄膜对大气敏感,ZMO/CdTe叠层的后处理,包括氯化镉处理、背接触沉积等,这些对高性能CdTe太阳能电池至关重要的步骤成为了严峻的挑战。为了充分发挥ZMO缓冲层的潜力,需要进行大量的研究。在此,硫氰酸铜(CuSCN)被证明是一种适用于ZMO/CdTe太阳能电池的具有多种优势的背接触材料。特别是,氢氧化铵作为CuSCN沉积的溶剂,在后续热处理过程中对ZMO层没有不利影响。研究了后退火温度以及CuSCN薄膜的厚度。最终,实现了16.7%的最佳功率转换效率,开路电压为0.857 V,短路电流密度为26.2 mA/cm,填充因子为74.0%。