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硅(111)表面反射高能正电子衍射(RHEPD)和反射高能电子衍射(RHEED)的方位角图比较。

Comparison of azimuthal plots for reflection high-energy positron diffraction (RHEPD) and reflection high-energy electron diffraction (RHEED) for Si(111) surface.

作者信息

Mitura Zbigniew

机构信息

AGH University of Science and Technology, Faculty of Metals Engineering and Industrial Computer Science, al. Mickiewicza 30, 30-059 Kraków, Poland.

出版信息

Acta Crystallogr A Found Adv. 2020 May 1;76(Pt 3):328-333. doi: 10.1107/S2053273320001205. Epub 2020 Mar 26.

Abstract

Azimuthal plots for RHEPD (reflection high-energy positron diffraction) and RHEED (reflection high-energy electron diffraction) were calculated using dynamical diffraction theory and then compared. It was assumed that RHEPD and RHEED azimuthal plots can be collected practically by recording the intensity while rotating the sample around the axis perpendicular to the surface (for the case of X-ray diffraction, such forms of data are called Renninger scans). It was found that RHEPD plots were similar to RHEED plots if they were compared at Bragg reflections of the same order. RHEPD plots can also be determined in the region of total external reflection and for such conditions multiple scattering effects turned out to be very weak. The findings for azimuthal plots are also discussed in the context of the formation mechanisms of Kikuchi patterns.

摘要

利用动力学衍射理论计算了反射高能正电子衍射(RHEPD)和反射高能电子衍射(RHEED)的方位角图,然后进行了比较。假设通过在样品绕垂直于表面的轴旋转时记录强度,可以实际收集RHEPD和RHEED方位角图(对于X射线衍射的情况,这种数据形式称为伦宁格扫描)。研究发现,如果在相同级次的布拉格反射下进行比较,RHEPD图与RHEED图相似。RHEPD图也可以在全外反射区域确定,并且在这种条件下,多次散射效应非常微弱。还结合菊池线图案的形成机制讨论了方位角图的研究结果。

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