Linklater Denver P, Haydous Fatima, Xi Cheng, Pergolesi Daniele, Hu Jingwen, Ivanova Elena P, Juodkazis Saulius, Lippert Thomas, Juodkazytė Jurga
School of Science, RMIT University, Melbourne, VIC 3000, Australia.
Melbourne Centre for Nanofabrication, ANFF, 151 Wellington Road, Clayton, VIC 3168, Australia.
Nanomaterials (Basel). 2020 May 1;10(5):873. doi: 10.3390/nano10050873.
The fabrication and characterization of photoanodes based on black-Si (b-Si) are presented using a photoelectrochemical cell in NaOH solution. B-Si was fabricated by maskless dry plasma etching and was conformally coated by tens-of-nm of TiO using atomic layer deposition (ALD) with a top layer of CoO x cocatalyst deposited by pulsed laser deposition (PLD). Low reflectivity R < 5 % of b-Si over the entire visible and near-IR ( λ < 2 μ m) spectral range was favorable for the better absorption of light, while an increased surface area facilitated larger current densities. The photoelectrochemical performance of the heterostructured b-Si photoanode is discussed in terms of the n-n junction between b-Si and TiO.
本文介绍了基于黑硅（b-Si）的光阳极在NaOH溶液中的光电化学池制备及表征。通过无掩膜干法等离子体蚀刻制备b-Si，并采用原子层沉积（ALD）法在其表面均匀包覆数十纳米的TiO，再通过脉冲激光沉积（PLD）法沉积顶层CoOx助催化剂。b-Si在整个可见光和近红外（λ < 2μm）光谱范围内具有低反射率R < 5%，有利于更好地吸收光，而增加的表面积促进了更大的电流密度。从b-Si与TiO之间的n-n结角度讨论了异质结构b-Si光阳极的光电化学性能。
