Nebhen Jamel, Alnowaiser Khaled, Meillere Stephane
Prince Sattam bin Abdulaziz University, College of Computer Engineering and Sciences, P.O. Box 151 Alkharj 11942, Saudi Arabia.
Aix Marseille University, CNRS, IM2NP UMR 7334, 13451, Marseille, France.
Micromachines (Basel). 2020 May 2;11(5):478. doi: 10.3390/mi11050478.
This paper presents a low-noise and low-power audio preamplifier. The proposed low-noise preamplifier employs a delay-time chopper stabilization (CHS) technique and a negative-R circuit, both in the auxiliary amplifier to cancel the non-idealities of the main amplifier. The proposed technique makes it possible to mitigate the preamplifier 1/f noise and thermal noise and improve its linearity. The low-noise preamplifier is implemented in 65 nm complementary metal-oxide semiconductor (CMOS) technology. The supply voltage is 1.2 V, while the power consumption is 159 µW, and the core area is 192 µm. The proposed circuit of the preamplifier was fabricated and measured. From the measurement results over a signal bandwidth of 20 kHz, it achieves a signal-to-noise ratio (SNR) of 80 dB, an equivalent-input referred noise of 5 nV/√Hz and a noise efficiency factor (NEF) of 1.9 within the frequency range from 1 Hz to 20 kHz.
本文介绍了一种低噪声、低功耗的音频前置放大器。所提出的低噪声前置放大器在辅助放大器中采用了延迟时间斩波稳定（CHS）技术和负阻电路，以消除主放大器的非理想特性。所提出的技术使得减轻前置放大器的1/f噪声和热噪声并提高其线性度成为可能。该低噪声前置放大器采用65纳米互补金属氧化物半导体（CMOS）技术实现。电源电压为1.2V，功耗为159μW，核心面积为192μm²。所提出的前置放大器电路已制作并进行了测量。从20kHz信号带宽的测量结果来看，在1Hz至20kHz频率范围内，它实现了80dB的信噪比（SNR）、5nV/√Hz的等效输入参考噪声和1.9的噪声效率因子（NEF）。
