Jadhav Rohit G, Kumar Amitesh, Kumar Sanjay, Maiti Sayan, Mukherjee Shaibal, Das Apurba K
Department of Chemistry, Indian Institute of Technology Indore, Indore, 453552, India.
Hybrid Nanodevice Research Group (HNRG), Electrical Engineering, Indian Institute of Technology Indore, Madhya Pradesh, 453552, India.
Chempluschem. 2020 May;85(5):910-920. doi: 10.1002/cplu.202000229.
In this work, two symmetrical donor-acceptor-donor (D-A-D) type benzoselenadiazole (BSeD)-based π-conjugated molecules were synthesized and employed as an active switching layer for non-volatile data storage applications. BSeD-based derivatives with different donor units attached through common vinylene linkers showed different electrical and optical properties. 4,7-Di((E)-styryl)benzo[c][2,1,3]selenadiazole (DSBSeD) and 4,7-bis((E)-4-methoxystyryl)benzo[c][2,1,3]selenadiazole (DMBSeD) are sandwiched between gallium-doped ZnO (GZO) and metal aluminum electrodes respectively through solution-processed spin-coating method. The solution-processed nanofibrous switching layer containing the DMBSeD-based memory device showed reliable memory characteristics in terms of write and erase operations with low SET voltage than the random-aggregated DSBSeD-based device. The nanofibrous molecular morphology of switching layer overcomes the interfacial hole transport energy barrier at the interface of the DMBSeD thin-film and the bottom GZO electrode. The memory device GZO/DMBSeD/Al based on nanofibrous switching layers shows switching characteristics at compliance current of 10 mA with V =0.79 V and V =-0.55 V. This work will be beneficial for the rational design of advanced next-generation organic memory devices by controlling the nanostructured morphology of active organic switching layer for enhanced charge-transfer phenomenon.
在本工作中，合成了两种基于苯并硒二唑（BSeD）的对称供体-受体-供体（D-A-D）型π共轭分子，并将其用作非易失性数据存储应用的有源开关层。通过常见的亚乙烯基连接体连接不同供体单元的基于BSeD的衍生物表现出不同的电学和光学性质。4,7-二（（E）-苯乙烯基）苯并[c][2,1,3]硒二唑（DSBSeD）和4,7-双（（E）-4-甲氧基苯乙烯基）苯并[c][2,1,3]硒二唑（DMBSeD）分别通过溶液处理旋涂法夹在掺镓氧化锌（GZO）和金属铝电极之间。含有基于DMBSeD的存储器件的溶液处理纳米纤维开关层在写入和擦除操作方面表现出可靠的存储特性，其设置电压比基于随机聚集的DSBSeD的器件低。开关层的纳米纤维分子形态克服了DMBSeD薄膜与底部GZO电极界面处的界面空穴传输能垒。基于纳米纤维开关层的存储器件GZO/DMBSeD/Al在10 mA的合规电流下，V = 0.79 V和V = -0.55 V时表现出开关特性。这项工作将有助于通过控制有源有机开关层的纳米结构形态以增强电荷转移现象，对先进的下一代有机存储器件进行合理设计。
