Ng Sheung Mei, Wang Huichao, Liu Yukuai, Wong Hon Fai, Yau Hei Man, Suen Chun Hung, Wu Ze Han, Leung Chi Wah, Dai Ji-Yan
Department of Applied Physics, The Hong Kong Polytechnic University, 999077, Hong Kong, P.R. China.
School of Physics, Sun Yat-Sen University, Guangzhou 510275, China.
ACS Nano. 2020 Jun 23;14(6):7077-7084. doi: 10.1021/acsnano.0c01815. Epub 2020 May 18.
Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe thin film using a heterostructure approach by depositing it on a ferrimagnetic insulator YIG (YFeO, yttrium iron garnet) is demonstrated. In this heterostructure, significant anomalous Hall effect can be observed at temperatures up to at least 400 K, which is a record high temperature for the observation of AHE in TMDs, and the large is more than 1 order of magnitude larger than those previously reported values in topological insulators or TMD-based heterostructures. A complicated interface with additional ZrO and amorphous YIG layers is actually observed between ZrTe and YIG. The magnetization of interfacial reaction-induced ZrO and YIG is believed to play a crucial role in the induced high-temperature AHE in the ZrTe. These results present a promising system for the spintronic device applications, and it may shed light on the designing approach to introduce magnetism to TMDs at room temperature.
将过渡金属二硫属化物（TMDs）与铁磁材料（FM）集成可能会产生引人入胜的物理现象，并为电子和自旋电子学应用带来希望。在这项工作中，通过将TMD ZrTe薄膜沉积在亚铁磁绝缘体钇铁石榴石（YIG，YFeO₃）上，利用异质结构方法展示了其高温反常霍尔效应（AHE）。在这种异质结构中，在高达至少400 K的温度下可以观察到显著的反常霍尔效应，这是在TMDs中观察到AHE的创纪录高温，并且其大的 比先前在拓扑绝缘体或基于TMD的异质结构中报道的值大1个多数量级。实际上在ZrTe和YIG之间观察到了具有额外ZrO和非晶YIG层的复杂界面。据信，界面反应诱导的ZrO和YIG的磁化在ZrTe中诱导的高温AHE中起着关键作用。这些结果为自旋电子器件应用提供了一个有前景的系统，并且可能为在室温下将磁性引入TMDs的设计方法提供启示。
