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三层半导体纳米片的能带结构与子带间跃迁

Band Structure and Intersubband Transitions of Three-Layer Semiconductor Nanoplatelets.

作者信息

Vovk Ilia A, Lobanov Vladimir V, Litvin Aleksandr P, Leonov Mikhail Yu, Fedorov Anatoly V, Rukhlenko Ivan D

机构信息

ITMO University, Center of Information Optical Technology, Saint Petersburg 197101, Russia.

The University of Sydney, Institute of Photonics and Optical Science (IPOS), School of Physics, Camperdown, NSW 2006, Australia.

出版信息

Nanomaterials (Basel). 2020 May 12;10(5):933. doi: 10.3390/nano10050933.

Abstract

This paper presents the first general theory of electronic band structure and intersubband transitions in three-layer semiconductor nanoplatelets. We find a dispersion relation and wave functions of the confined electrons and use them to analyze the band structure of core/shell nanoplatelets with equal thicknesses of the shell layers. It is shown that the energies of electrons localized inside the shell layers can be degenerate for certain electron wave vectors and certain core and shell thicknesses. We also show that the energies of intersubband transitions can be nonmonotonic functions of the core and shell thicknesses, exhibiting pronounced local minima and maxima which can be observed in the infrared absorption spectra. Our results will prove useful for the design of photonic devices based on multilayered semiconductor nanoplatelets operating at infrared frequencies.

摘要

本文提出了三层半导体纳米片层中电子能带结构和子带间跃迁的首个通用理论。我们找到了受限电子的色散关系和波函数,并利用它们分析了壳层厚度相等的核/壳纳米片的能带结构。结果表明,对于特定的电子波矢以及特定的核和壳厚度,壳层内局域电子的能量可能会发生简并。我们还表明,子带间跃迁的能量可能是核和壳厚度的非单调函数,呈现出明显的局部最小值和最大值,这可以在红外吸收光谱中观察到。我们的结果将证明对基于在红外频率下工作的多层半导体纳米片的光子器件设计有用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ad0e/7279220/d9ffc544156d/nanomaterials-10-00933-g001.jpg

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