Cao Ying-Jie, Zhou Lin, He Lei, Shi Ping-Ping, Ye Qiong, Fu Da-Wei
Ordered Matter Science Research Center, Jiangsu Key Laboratory for Science and Applications of, Molecular Ferroelectrics, Southeast University, Nanjing, 211189, P. R. China.
Chemistry. 2020 Nov 6;26(62):14124-14129. doi: 10.1002/chem.202001266. Epub 2020 Sep 29.
In the last decade, hybrid materials have received widespread attention. In particular, hybrid lead halide perovskite-type semiconductors are very attractive owing to their great flexibility in band gap engineering. Here, by using precise molecular modifications, three one-dimensional perovskite-type semiconductor materials are designed and obtained: [Me PCH X][PbBr ] (X=H, F, and Cl for compounds 1, 2, and 3, respectively). The introduction of a heavier halogen atom (F or Cl) to [Me P] increases the potential energy barrier required for the tumbling motion of the cation, hence achieving the transformation of the phase transition temperature from low temperature (192 K) to room temperature (285 K) and high temperature (402.3 K). Moreover, the optical band gaps reveal a broadening trend with 3.176 eV, 3.215 eV, and 3.376 eV along the H→F→Cl series, which is attributed to the formation of the structural distortion.
在过去十年中,杂化材料受到了广泛关注。特别是,杂化卤化铅钙钛矿型半导体因其在带隙工程方面的巨大灵活性而极具吸引力。在此,通过精确的分子修饰,设计并获得了三种一维钙钛矿型半导体材料:[MePCHX][PbBr](化合物1、2和3的X分别为H、F和Cl)。向[MeP]中引入较重的卤素原子(F或Cl)会增加阳离子翻滚运动所需的势能垒,从而实现相变温度从低温(192K)到室温(285K)以及高温(402.3K)的转变。此外,光学带隙沿H→F→Cl系列呈现出变宽趋势,分别为3.176eV、3.215eV和3.376eV,这归因于结构畸变的形成。