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[(CH)NH]PdBr,一种具有改善的光学和电学性质的层状混合卤化物钙钛矿半导体。

[(CH)NH]PdBr, a layered hybrid halide perovskite semiconductor with improved optical and electrical properties.

作者信息

Trabelsi Kawther, Drissi Nidhal, Hajlaoui Fadhel, Zighrioui Mustapha, Rhaiem Abdallah, Audebrand Nathalie, Roisnel Thierry, Karim Karoui

机构信息

Laboratoire des Caractérisations Spectroscopiques et Optique des Matériaux, Faculté des Sciences de Sfax, Université de Sfax B.P. 1171 3000 Sfax Tunisia

Department of Physics, Faculty of Science, King Khalid University P.O. Box 9004 Abha 61413 Saudi Arabia.

出版信息

RSC Adv. 2023 Aug 3;13(33):23348-23358. doi: 10.1039/d3ra04085b. eCollection 2023 Jul 26.

DOI:10.1039/d3ra04085b
PMID:37545601
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10399296/
Abstract

Inspired by the success of three-dimensional hybrid perovskites (CHNH)PbX (X = Cl, Br, I), two-dimensional (2D) organic-inorganic hybrid metal halides have drawn immense attention due to their highly tunable physical properties. Moreover, although 3D hybrid perovskite materials have been reported, the development of new organic-inorganic hybrid semiconductors is still an area in urgent need of investigation. Here, we used the dimethylammonium cation to construct a palladium-based halide perovskite material [(CH)NH]PdBr with a 2D layered structure. This layered perovskite undergoes one endothermic peak at 415 K corresponding to melting of the organic molecule. The thermal stability of the compound is up to about 500 K. The activation energy and conduction mechanisms are discussed, and the optical study shows a gap energy equal to 2.5 eV. The electrical AC conductivity is in the order of 10 Ω cm, which confirms the semiconductor character of this material and indicates its importance in the optoelectronic domain.

摘要

受三维杂化钙钛矿(CH₃NH₃)PbX₃(X = Cl、Br、I)成功的启发,二维(2D)有机-无机杂化金属卤化物因其高度可调节的物理性质而备受关注。此外,尽管已经报道了三维杂化钙钛矿材料,但新型有机-无机杂化半导体的开发仍然是一个急需研究的领域。在此,我们使用二甲基铵阳离子构建了一种具有二维层状结构的钯基卤化物钙钛矿材料[(CH₃)₂NH₂]PdBr₄。这种层状钙钛矿在415 K处有一个吸热峰,对应于有机分子的熔化。该化合物的热稳定性高达约500 K。讨论了活化能和传导机制,光学研究表明带隙能量等于2.5 eV。交流电导率约为10⁻⁶ Ω⁻¹cm⁻¹,这证实了该材料的半导体特性,并表明其在光电子领域的重要性。

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