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钒插层和替代掺杂的过渡金属二硫属化物TiVSe的电子结构

Electronic Structures of the Vanadium-Intercalated and Substitutionally Doped Transition-Metal Dichalcogenides TiVSe.

作者信息

Shkvarin Alexey S, Yarmoshenko Yury M, Merentsov Alexander I, Shkvarina Elena G, Gubkin Andrei F, Píš Igor, Nappini Silvia, Bondino Federica, Bobrikov Ivan A, Titov Alexander N

机构信息

M. N. Miheev Institute of Metal Physics of Ural Branch (UrD) of Russian Academy of Sciences (RAS), 620990 Ekaterinburg, Russia.

Elettra-Sincrotrone Trieste SCpA, S.S. 14, km 163.5, 34149 Basovizza, Trieste, Italy.

出版信息

Inorg Chem. 2020 Jun 15;59(12):8543-8551. doi: 10.1021/acs.inorgchem.0c00953. Epub 2020 May 26.

Abstract

The electronic structures of V-intercalated TiSe and substitutionally doped dichalcogenides TiVSe have been studied using soft X-ray photoelectron, resonant photoelectron, and absorption spectroscopies. In the case of the substitution of Ti by V, the formation of coherently oriented structural fragments VSe and TiSe is observed and a small charge transfer between these fragments is found. Intercalation of the V atoms into TiSe leads to charge transfer from the V atoms to the Ti atoms with the formation of covalent complexes Ti-Se-V-Se-Ti.

摘要

利用软X射线光电子能谱、共振光电子能谱和吸收光谱研究了V插层的TiSe以及替代掺杂的二硫属化物TiVSe的电子结构。在V替代Ti的情况下,观察到形成了取向一致的结构片段VSe和TiSe,并且发现这些片段之间存在少量电荷转移。V原子插入TiSe导致电荷从V原子转移到Ti原子,并形成共价络合物Ti-Se-V-Se-Ti。

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