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通过钛(Ti(4+))掺杂解耦晶格畸变和电荷掺杂对VO₂相变行为的影响。

Decoupling the Lattice Distortion and Charge Doping Effects on the Phase Transition Behavior of VO2 by Titanium (Ti(4+)) Doping.

作者信息

Wu Yanfei, Fan Lele, Liu Qinghua, Chen Shi, Huang Weifeng, Chen Feihu, Liao Guangming, Zou Chongwen, Wu Ziyu

机构信息

State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing. 100871, People's Republic of China.

National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei. 230029, People's Republic of China.

出版信息

Sci Rep. 2015 May 7;5:9328. doi: 10.1038/srep09328.

Abstract

The mechanism for regulating the critical temperature (TC) of metal-insulator transition (MIT) in ions-doped VO2 systems is still a matter of debate, in particular, the unclear roles of lattice distortion and charge doping effects. To rule out the charge doping effect on the regulation of TC, we investigated Ti(4+)-doped VO2 (Ti(x)V(1-x)O2) system. It was observed that the TC of Ti(x)V(1-x)O2 samples first slightly decreased and then increased with increasing Ti concentration. X-ray absorption fine structure (XAFS) spectroscopy was used to explore the electronic states and local lattice structures around both Ti and V atoms in Ti(x)V(1-x)O2 samples. Our results revealed the local structure evolution from the initial anatase to the rutile-like structure around the Ti dopants. Furthermore, the host monoclinic VO2 lattice, specifically, the VO6 octahedra would be subtly distorted by Ti doping. The distortion of VO6 octahedra and the variation of TC showed almost the similar trend, confirming the direct effect of local structural perturbations on the phase transition behavior. By comparing other ion-doping systems, we point out that the charge doping is more effective than the lattice distortion in modulating the MIT behavior of VO2 materials.

摘要

离子掺杂VO₂体系中调节金属 - 绝缘体转变(MIT)临界温度(TC)的机制仍存在争议,尤其是晶格畸变和电荷掺杂效应的作用尚不明确。为了排除电荷掺杂对TC调节的影响,我们研究了Ti(4+)掺杂的VO₂(Ti(x)V(1 - x)O₂)体系。观察到Ti(x)V(1 - x)O₂样品的TC随Ti浓度增加先略有下降然后上升。利用X射线吸收精细结构(XAFS)光谱研究了Ti(x)V(1 - x)O₂样品中Ti和V原子周围的电子态和局部晶格结构。我们的结果揭示了Ti掺杂剂周围从初始锐钛矿到类金红石结构的局部结构演变。此外,主体单斜VO₂晶格,特别是VO₆八面体,会因Ti掺杂而发生细微畸变。VO₆八面体的畸变和TC的变化呈现出几乎相似的趋势,证实了局部结构扰动对相变行为的直接影响。通过比较其他离子掺杂体系,我们指出在调节VO₂材料的MIT行为方面,电荷掺杂比晶格畸变更有效。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b3e9/4423444/1a26d9b3406f/srep09328-f1.jpg

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