Lin Song-Sheng, Shi Qian, Dai Ming-Jiang, Wang Kun-Lun, Chen Sheng-Chi, Kuo Tsung-Yen, Liu Dian-Guang, Song Shu-Mei, Sun Hui
The Key Lab of Guangdong for Modern Surface Engineering Technology, National Engineering Laboratory for Modern Materials Surface Engineering Technology, Guangdong Institute of New Materials, Guangzhou 510651, China.
Shandong Key Laboratory of Optical Astronomy and Solar-Terrestrial Environment, School of Space Science and Physics, Shandong University, Weihai 264209, China.
Materials (Basel). 2020 May 21;13(10):2376. doi: 10.3390/ma13102376.
CuCrO is one of the most promising p-type transparent conductive oxide (TCO) materials. Its electrical properties can be considerably improved by Mg doping. In this work, Cr-deficient CuCrO thin films were deposited by reactive magnetron sputtering based on 5 at.% Mg doping. The influence of Cr deficiency on the film's optoelectronic properties was investigated. As the film's composition varied, CuO impurity phases appeared in the film. The mixed valency of Cu/Cu led to an enhancement of the hybridization between the Cu and O orbitals, which further reduced the localization of the holes by oxygen. As a result, the carrier concentration significantly improved. However, since the impurity phase of CuO introduced more grain boundaries in Cu[CrMg]O, impeding the transport of the carrier and incident light in the film, the carrier mobility and the film's transmittance reduced accordingly. In this work, the optimal optoelectronic performance is realized where the film's composition is Cu[CrMg]O. Its Haacke's figure of merit is about 1.23 × 10 Ω.
CuCrO是最有前途的p型透明导电氧化物（TCO）材料之一。通过镁掺杂可以显著改善其电学性能。在这项工作中，基于5 at.%的镁掺杂，通过反应磁控溅射沉积了缺铬的CuCrO薄膜。研究了铬缺乏对薄膜光电性能的影响。随着薄膜成分的变化，薄膜中出现了CuO杂质相。Cu/Cu的混合价态导致Cu和O轨道之间的杂化增强，这进一步减少了氧对空穴的局域化。结果，载流子浓度显著提高。然而，由于CuO的杂质相在Cu[CrMg]O中引入了更多的晶界，阻碍了薄膜中载流子和入射光的传输，载流子迁移率和薄膜的透过率相应降低。在这项工作中，当薄膜组成为Cu[CrMg]O时实现了最佳的光电性能。其哈克品质因数约为1.23×10Ω 。 （注：原文中“1.23 × 10 Ω”表述似乎不完整，可能有误）
