钛掺杂氧化铟锡薄膜的光电性能研究

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.

作者信息

Pu Nen-Wen, Liu Wei-Sheng, Cheng Huai-Ming, Hu Hung-Chun, Hsieh Wei-Ting, Yu Hau-Wei, Liang Shih-Chang

机构信息

Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan.

Materials & Electro-Optics Research Division, Chung-Shan Institute of Science and Technology, Lung Tan 32599, Taiwan.

出版信息

Materials (Basel). 2015 Sep 21;8(9):6471-6481. doi: 10.3390/ma8095316.

DOI:10.3390/ma8095316

PMID:28793575

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5512923/

Abstract

In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10⁴ Ω/cm), carrier concentration (4.1 × 10 cm³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10 cm³) with a high figure of merit (81.1 × 10³ Ω¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

摘要

在本研究中，采用直流磁控溅射法制备了掺钛氧化铟锡（ITO）薄膜。在制备350纳米厚薄膜的过程中，溅射功率固定为100瓦，衬底温度从室温升至500°C。在400°C的沉积温度下，掺钛ITO薄膜在波长400 - 800纳米处表现出优异的薄膜电阻率（1.5×10⁻⁴Ω/cm）、载流子浓度（4.1×10²⁰cm⁻³）、载流子迁移率（10 cm²/Vs）和平均可见光透过率（90%）。具有高优值（81.1×10⁻³Ω⁻¹）的掺钛ITO合金的优异载流子浓度（>10²⁰cm⁻³）证明了钛掺杂的显著贡献，表明它们非常适合应用于光电器件。