Zhou Chun, Tambo Naoki, Ashley Elizabeth Michiko, Liao Yuxuan, Shiomi Junichiro, Takahashi Kouhei, Craig Gordon S W, Nealey Paul F
Pritzker School of Molecular Engineering, The University of Chicago, Chicago, Illinois 60637, United States.
Technology Innovation Division, Panasonic Corporation, Kyoto 619-0237, Japan.
ACS Nano. 2020 Jun 23;14(6):6980-6989. doi: 10.1021/acsnano.0c01463. Epub 2020 Jun 2.
Studies have demonstrated that the thermal conductivity (κ) of crystalline semiconductor materials can be reduced by phonon scattering in periodic nanostructures formed using templates fabricated from self-assembled block copolymers (BCPs). Compared to crystalline materials, the heat transport mechanisms in amorphous inorganic materials differ significantly and have been explored far less extensively. However, thermal management of amorphous inorganic solids is crucial for a broad range of semiconductor devices. Here we present the fabrication of freestanding amorphous silicon nitride (SiN) membranes for studying κ in an amorphous solid. To form a periodic nanostructure, directed self-assembly of cylinder-forming BCPs is used to pattern in the SiN highly ordered, hexagonally close packed nanopores with pitch and neck width down to 37.5 and 12 nm, respectively. The κ of the nanoporous SiN membranes is 60% smaller than the classically predicted value based on just the membrane porosity. In comparison, holes with much larger neck widths and pitches patterned by e-beam lithography lead to only a slight reduction in κ, which is closer to the classical porosity-based prediction. These results demonstrate that κ of amorphous SiN can be reduced by introducing periodic nanostructures that behave as a phononic crystal, where the relationship between the smallest dimension of the nanostructure and the length scale of the mean-free paths of the dominant, heat-carrying phonons is critical. Additionally, changing the orientation of the hexagonal array of nanopores relative to the primary direction of heat flow has a smaller impact on amorphous SiN than was previously observed in silicon.
研究表明,通过在使用自组装嵌段共聚物(BCP)制备的模板形成的周期性纳米结构中进行声子散射,可以降低晶体半导体材料的热导率(κ)。与晶体材料相比,非晶态无机材料中的热传输机制有显著差异,并且对其研究还远不够广泛。然而,非晶态无机固体的热管理对于广泛的半导体器件至关重要。在此,我们展示了用于研究非晶态固体中κ的独立非晶硅氮化物(SiN)膜的制备。为了形成周期性纳米结构,使用形成圆柱状的BCP的定向自组装在SiN中形成高度有序的、六边形紧密堆积的纳米孔,其间距和颈部宽度分别低至37.5和12 nm。纳米多孔SiN膜的κ比仅基于膜孔隙率的经典预测值小60%。相比之下,通过电子束光刻形成的具有大得多的颈部宽度和间距的孔只会导致κ略有降低,这更接近基于经典孔隙率的预测。这些结果表明,通过引入表现为声子晶体的周期性纳米结构,可以降低非晶态SiN的κ,其中纳米结构的最小尺寸与主要载热声子的平均自由程长度尺度之间的关系至关重要。此外,改变纳米孔六边形阵列相对于热流主方向的取向对非晶态SiN的影响比先前在硅中观察到的要小。