Crnjac Andreo, Skukan Natko, Provatas Georgios, Rodriguez-Ramos Mauricio, Pomorski Michal, Jakšić Milko
Division of Experimental Physics, Ruđer Bošković Institute, 10000 Zagreb, Croatia.
CEA-LIST, Diamond Sensors Laboratory, F91191 Gif-sur-Yvette, France.
Materials (Basel). 2020 May 29;13(11):2473. doi: 10.3390/ma13112473.
Diamond, as a wide band-gap semiconductor material, has the potential to be exploited under a wide range of extreme operating conditions, including those used for radiation detectors. The radiation tolerance of a single-crystal chemical vapor deposition (scCVD) diamond detector was therefore investigated while heating the device to elevated temperatures. In this way, operation under both high-temperature and high-radiation conditions could be tested simultaneously. To selectively introduce damage in small areas of the detector material, a 5 MeV scanning proton microbeam was used as damaging radiation. The charge collection efficiency (CCE) in the damaged areas was monitored using 2 MeV protons and the ion beam induced charge (IBIC) technique, indicating that the CCE decreases with increasing temperature. This decreasing trend saturates in the temperature range of approximately 660 K, after which CCE recovery is observed. These results suggest that the radiation hardness of diamond detectors deteriorates at elevated temperatures, despite the annealing effects that are also observed. It should be noted that the diamond detector investigated herein retained its very good spectroscopic properties even at an operation temperature of 725 K (≈2% for 2 MeV protons).
金刚石作为一种宽带隙半导体材料，有潜力在包括用于辐射探测器的各种极端工作条件下得到应用。因此，在将单晶化学气相沉积（scCVD）金刚石探测器加热到高温的同时，研究了其辐射耐受性。通过这种方式，可以同时测试在高温和高辐射条件下的运行情况。为了在探测器材料的小区域内选择性地引入损伤，使用5兆电子伏扫描质子微束作为损伤辐射。使用2兆电子伏质子和离子束诱导电荷（IBIC）技术监测损伤区域的电荷收集效率（CCE），结果表明CCE随温度升高而降低。在大约660 K的温度范围内，这种下降趋势趋于饱和，之后观察到CCE恢复。这些结果表明，尽管也观察到了退火效应，但金刚石探测器的辐射硬度在高温下会变差。需要注意的是，本文研究的金刚石探测器即使在725 K的工作温度下（对于2兆电子伏质子约为2%）仍保持其非常好的光谱特性。
