Medina Elisabetta, Sangregorio Enrico, Crnjac Andreo, Romano Francesco, Milluzzo Giuliana, Vignati Anna, Jakšic Milko, Calcagno Lucia, Camarda Massimo
Physics Department, Università degli Studi di Torino, Via Pietro Giuria 1, 10125 Turin, Italy.
INFN-National Institute for Nuclear Physics, Turin Division, Via Pietro Giuria 1, 10125 Turin, Italy.
Micromachines (Basel). 2023 Jan 9;14(1):166. doi: 10.3390/mi14010166.
Silicon carbide (SiC), thanks to its material properties similar to diamond and its industrial maturity close to silicon, represents an ideal candidate for several harsh-environment sensing applications, where sensors must withstand high particle irradiation and/or high operational temperatures. In this study, to explore the radiation tolerance of SiC sensors to multiple damaging processes, both at room and high temperature, we used the Ion Microprobe Chamber installed at the Ruđer Bošković Institute (Zagreb, Croatia), which made it possible to expose small areas within the same device to different ion beams, thus evaluating and comparing effects within a single device. The sensors tested, developed jointly by STLab and SenSiC, are PIN diodes with ultrathin free-standing membranes, realized by means of a recently developed doping-selective electrochemical etching. In this work, we report on the changes of the charge transport properties, specifically in terms of the charge collection efficiency (CCE), with respect to multiple localized proton irradiations, performed at both room temperature (RT) and 500 °C.
碳化硅（SiC）由于其材料特性与金刚石相似，且工业成熟度接近硅，是几种恶劣环境传感应用的理想候选材料，在这些应用中，传感器必须承受高粒子辐照和/或高工作温度。在本研究中，为了探究SiC传感器在室温和高温下对多种损伤过程的辐射耐受性，我们使用了位于克罗地亚萨格勒布鲁杰尔·博斯科维奇研究所的离子微探针室，该设备能够将同一器件内的小区域暴露于不同的离子束下，从而在单个器件内评估和比较各种效应。所测试的传感器由STLab和SenSiC联合开发，是具有超薄独立膜的PIN二极管，通过最近开发的掺杂选择性电化学蚀刻工艺实现。在这项工作中，我们报告了在室温和500°C下进行多次局部质子辐照后，电荷传输特性的变化，特别是电荷收集效率（CCE）方面的变化。
