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通过改进的表面通道技术将重掺杂块状硅侧壁电极嵌入自由悬挂的微流体通道之间。

Heavily-Doped Bulk Silicon Sidewall Electrodes Embedded between Free-Hanging Microfluidic Channels by Modified Surface Channel Technology.

作者信息

Zhao Yiyuan, Veltkamp Henk-Willem, Schut Thomas V P, Sanders Remco G P, Breazu Bogdan, Groenesteijn Jarno, de Boer Meint J, Wiegerink Remco J, Lötters Joost C

机构信息

MESA+ Institute for Nanotechnology, University of Twente, 7522 NB Enschede, The Netherlands.

Bronkhorst High-Tech BV, 7261 AK Ruurlo, The Netherlands.

出版信息

Micromachines (Basel). 2020 May 31;11(6):561. doi: 10.3390/mi11060561.

Abstract

Surface Channel Technology is known as the fabrication platform to make free-hanging microchannels for various microfluidic sensors and actuators. In this technology, thin film metal electrodes, such as platinum or gold, are often used for electrical sensing and actuation purposes. As a result that they are located at the top surface of the microfluidic channels, only topside sensing and actuation is possible. Moreover, in microreactor applications, high temperature degradation of thin film metal layers limits their performance as robust microheaters. In this paper, we report on an innovative idea to make microfluidic devices with integrated silicon sidewall electrodes, and we demonstrate their use as microheaters. This is achieved by modifying the original Surface Channel Technology with optimized mask designs. The modified technology allows to embed heavily-doped bulk silicon electrodes in between the sidewalls of two adjacent free-hanging microfluidic channels. The bulk silicon electrodes have the same electrical properties as the extrinsic silicon substrate. Their cross-sectional geometry and overall dimensions can be designed by optimizing the mask design, hence the resulting resistance of each silicon electrode can be customized. Furthermore, each silicon electrode can be electrically insulated from the silicon substrate. They can be designed with large cross-sectional areas and allow for high power dissipation when used as microheater. A demonstrator device is presented which reached 119 . 4 ∘ C at a power of 206 . 9 m W , limited by thermal conduction through the surrounding air. Other potential applications are sensors using the silicon sidewall electrodes as resistive or capacitive readout.

摘要

表面通道技术是一种用于制造各种微流体传感器和致动器的自由悬挂微通道的制造平台。在这项技术中,诸如铂或金之类的薄膜金属电极常用于电传感和致动目的。由于它们位于微流体通道的顶表面,因此只能进行顶侧传感和致动。此外,在微反应器应用中,薄膜金属层的高温降解限制了它们作为坚固微加热器的性能。在本文中,我们报告了一种制造具有集成硅侧壁电极的微流体装置的创新想法,并展示了它们作为微加热器的用途。这是通过用优化的掩模设计修改原始的表面通道技术来实现的。改进后的技术允许在两个相邻的自由悬挂微流体通道的侧壁之间嵌入重掺杂的体硅电极。体硅电极具有与非本征硅衬底相同的电学性质。它们的横截面几何形状和整体尺寸可以通过优化掩模设计来设计,因此每个硅电极的电阻可以定制。此外,每个硅电极可以与硅衬底电绝缘。它们可以设计成具有大的横截面面积,并在用作微加热器时允许高功率耗散。展示了一个演示装置,在206.9毫瓦的功率下达到了119.4摄氏度,受周围空气热传导的限制。其他潜在应用是使用硅侧壁电极作为电阻或电容读出的传感器。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/b9d1/7344707/85e4d87c7791/micromachines-11-00561-g001.jpg

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