Duverger Eric, Boyer Anne-Gaëlle, Sauriat-Dorizon Hélène, Sonnet Philippe, Stephan Régis, Hanf Marie-Christine, Riedel Damien
Institut FEMTO-ST, Univ. Bourgogne Franche-Comté, CNRS, 15B avenue des Montboucons, F-25030 Besançon, France.
Institut de Chimie Moléculaire et des Matériaux d'Orsay (ICMMO), CNRS, Univ. Paris Sud, Université Paris-Saclay, F-91405 Orsay, France.
ACS Appl Mater Interfaces. 2020 Jul 1;12(26):29661-29670. doi: 10.1021/acsami.0c06631. Epub 2020 Jun 17.
The ability to precisely control the electronic coupling/decoupling of adsorbates from surfaces is an essential goal. It is important for fundamental studies not only in surface science but also in several applied domains including, for example, miniaturized molecular electronic or for the development of various devices such as nanoscale biosensors or photovoltaic cells. Here, we provide atomic-scale experimental and theoretical investigations of a semi-insulating layer grown on a silicon surface via its epitaxy with CaF. We show that, following the formation of a wetting layer, the ensuing organized unit cells are coupled to additional physisorbed CaF molecules, periodically located in their surroundings. This configuration shapes the formation of ribbons of stripes that functionalize the semiconductor surface. The obtained assembly, having a monolayer thickness, reveals a surface gap energy of ∼3.2 eV. The adsorption of iron tetraphenylporphyrin molecules on the ribbons of stripes is used to estimate the electronic insulating properties of this structure via differential conductance measurements. Density functional theory (DFT) including several levels of complexity (annealing, DFT + , and nonlocal van der Waals functionals) is employed to reproduce our experimental observations. Our findings offer a unique and robust template that brings an alternative solution to electronic semi-insulating layers on metal surfaces such as NaCl. Hence, CaF/Si(100) ribbon of stripe structures, whose lengths can reach more than 100 nm, can be used as a versatile surface platform for various atomic-scale studies of molecular devices.
精确控制吸附物与表面之间的电子耦合/去耦合能力是一个重要目标。这不仅对表面科学的基础研究很重要,而且对包括例如小型化分子电子学或各种器件(如纳米级生物传感器或光伏电池)的开发等多个应用领域也很重要。在此,我们通过硅与CaF的外延生长,对在硅表面生长的半绝缘层进行了原子尺度的实验和理论研究。我们表明,在形成润湿层之后,随后形成的有序晶胞与额外物理吸附的CaF分子耦合,这些分子周期性地位于其周围环境中。这种构型塑造了使半导体表面功能化的条纹带的形成。所获得的具有单层厚度的组件显示出约3.2 eV的表面能隙。通过差分电导测量,利用四苯基卟啉铁分子在条纹带上的吸附来估计该结构的电子绝缘性能。采用包括几个复杂程度层次(退火、DFT + 和非局部范德华泛函)的密度泛函理论(DFT)来重现我们的实验观察结果。我们的发现提供了一个独特且稳健的模板,为诸如NaCl等金属表面上的电子半绝缘层带来了替代解决方案。因此,长度可达100 nm以上的CaF/Si(100)条纹结构带可作为用于分子器件各种原子尺度研究的通用表面平台。