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溶剂蒸汽辅助的半导体聚合物分子取向和载流子传输的磁操纵

Solvent Vapor-Assisted Magnetic Manipulation of Molecular Orientation and Carrier Transport of Semiconducting Polymers.

作者信息

Pan Guoxing, Hu Lin, Su Songlin, Yuan Jianyu, Li Tian, Xiao Xuhua, Chen Qianwang, Zhang Fapei

机构信息

Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China.

Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory (HMFL), Chinese Academy of Science, Hefei 230031, P. R. China.

出版信息

ACS Appl Mater Interfaces. 2020 Jul 1;12(26):29487-29496. doi: 10.1021/acsami.0c02749. Epub 2020 Jun 18.

Abstract

Effective control of the molecular orientation and the degree of ordering in organic semiconductors is important to achieve high-performance organic electronics. Herein, we have successfully achieved highly oriented films in centimeter scale for a naphthalenedicarboximide-based semiconducting polymer (P(NDI2OD-T2)) by solvent vapor annealing (SVA) of precast films under a high magnetic field (HMF). As revealed by the microstructural studies, the SVA-HMF films exhibit a remarkably higher degree of chain alignment and high morphological uniformity compared to the HMF-guided drop-cast films. Based on the structural evolution of the films with the SVA time, a mechanism is proposed to elucidate the alignment process, which emphasizes that the chain aggregates re-formed in the swollen films trigger magnetic alignment and determine the film order. Compared with the unaligned films, field-effect transistors of the magnetic aligned P(NDI2OD-T2) films have exhibited a 19-fold enhancement of electron mobility and an extraordinarily large mobility anisotropy of 125. Furthermore, a significantly reduced energetic barrier for activated transport is observed on the aligned devices from temperature-variable measurements. The improved performance achieved by the HMF-SVA process has indicated its potential for high-performance organic electronic applications.

摘要

有效控制有机半导体中的分子取向和有序度对于实现高性能有机电子器件至关重要。在此,我们通过在高磁场(HMF)下对预制薄膜进行溶剂气相退火(SVA),成功制备了厘米级的高度取向的基于萘二甲酰亚胺的半导体聚合物(P(NDI2OD-T2))薄膜。微观结构研究表明,与HMF引导下滴铸的薄膜相比,SVA-HMF薄膜表现出显著更高的链排列程度和高形态均匀性。基于薄膜随SVA时间的结构演变,提出了一种机制来阐明排列过程,该机制强调在溶胀薄膜中重新形成的链聚集体引发磁排列并决定薄膜的有序度。与未排列的薄膜相比,磁排列的P(NDI2OD-T2)薄膜场效应晶体管的电子迁移率提高了19倍,迁移率各向异性高达125。此外,通过变温测量观察到排列器件上活化传输的能垒显著降低。HMF-SVA工艺实现的性能提升表明了其在高性能有机电子应用中的潜力。

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