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{040/110} 具有单斜白钨矿型BiVO₄的面型同型异质结

{040/110} Facet Isotype Heterojunctions with Monoclinic Scheelite BiVO.

作者信息

Baral Basudev, Parida Kulamani

机构信息

Centre for Nano Science and Nano Technology, Siksha 'O' Anusandhan (Deemed to be University), Bhubaneswar 751030, India.

出版信息

Inorg Chem. 2020 Jul 20;59(14):10328-10342. doi: 10.1021/acs.inorgchem.0c01465. Epub 2020 Jun 25.

Abstract

Controlling the phase, crystallinity, and microstructure and fabricating a facet isotype heterojunction with a proscribed reduction-oxidation facet exposure factor have a strong constructive effect toward photoexciton separation and migration. In this respect, here diverse synthetic courses such as calcination (BiVO-C), hydrothermal treatment (BiVO-H), and a reflux method (BiVO-R) are introduced to fabricate various hierarchical morphologies of highly crystalline monoclinic scheelite bismuth vanadate (BiVO) with different redox facet exposure factors that have been well established by X-ray diffraction, Fourier transform infrared spectroscopy, field emission scanning electron microscopy, and transmission electron microscopy analysis. The analytical and experimental investigations revealed superior photocatalytic upshots of a BiVO-R {040/110} facet isotype heterojunction toward levofloxacin (LVF) detoxification (71.2%, 120 min) and the water oxidation reaction (530.6 μmol, 120 min) relative to BiVO-C (42.3%, 434.2 μmol) and BiVO-H (60.4%, 494.8 μmol). Accordingly, the BiVO-R {040/110} facet isotype heterojunction (145.6 μA/cm) expressed an enhanced photocurrent in comparison to pristine BiVO-C (75.5 μA/cm) and BiVO-H (113.1 μA/cm). The superior photocatalytic redox efficiency was attributed to well-exposed {040} reduction and {110} oxidation facets and a superior relative {040} facet exposure factor provoking an enhanced charge carrier separation over a BiVO-R {040/110} facet isotype heterojunction. The spatial exciton separation over the BiVO-R sample was well established by numerous analytical and experimental investigations. The effectual associations among physicochemical, photoelectrochemical properties, {040/110} facet isotype heterojunction, relative reduction-oxidation facet exposure factor, and photocatalytic performances of fabricated BiVO microstructures were well established, and the upshots of this research were discussed finely. The research signifies an effectual direction for morphology and relative reduction-oxidation facet exposure factor controlled fabrication of facet isotype heterojunction based materials for superior photocatalysis and could be advantageous for supplementary research areas.

摘要

控制相、结晶度和微观结构,并制备具有规定氧化还原面暴露因子的面同型异质结,对光激子的分离和迁移具有很强的建设性作用。在这方面,本文引入了多种合成方法,如煅烧(BiVO-C)、水热处理(BiVO-H)和回流法(BiVO-R),以制备具有不同氧化还原面暴露因子的高度结晶单斜白钨矿钒酸铋(BiVO)的各种分级形态,这些形态已通过X射线衍射、傅里叶变换红外光谱、场发射扫描电子显微镜和透射电子显微镜分析得到充分证实。分析和实验研究表明,相对于BiVO-C(42.3%,434.2 μmol)和BiVO-H(60.4%,494.8 μmol),BiVO-R {040/110}面同型异质结对左氧氟沙星(LVF)解毒(71.2%,120分钟)和水氧化反应(530.6 μmol,120分钟)具有优异的光催化效果。因此,与原始BiVO-C(75.5 μA/cm)和BiVO-H(113.1 μA/cm)相比,BiVO-R {040/110}面同型异质结(145.6 μA/cm)表现出增强的光电流。优异的光催化氧化还原效率归因于{040}还原面和{110}氧化面的良好暴露,以及在BiVO-R {040/110}面同型异质结上引发增强的电荷载流子分离的优异相对{040}面暴露因子。通过大量分析和实验研究,很好地证实了BiVO-R样品上的空间激子分离。很好地确立了所制备的BiVO微观结构的物理化学、光电化学性质、{040/110}面同型异质结、相对氧化还原面暴露因子和光催化性能之间的有效关联,并对本研究结果进行了详细讨论。该研究为基于面同型异质结材料的形态和相对氧化还原面暴露因子控制制备提供了一个有效的方向,以实现优异的光催化性能,并且可能对其他研究领域有利。

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