Lee Heung-Shik
Department of Automobile System Engineering, Joongbu University, 305 Dongheon-ro Deokyang-gu, Goyang-si, Gyeonggi-do 10279, South Korea.
J Nanosci Nanotechnol. 2020 Nov 1;20(11):6776-6781. doi: 10.1166/jnn.2020.18776.
Magnetos-mechanical behaviors of TbDyFe/Graphene/TbDyFe film were compared with a tri-layered TbDyFe film to verify the effects of a graphene thin layer on the improvement of magnetic-mechanical performance, as well as decrease of dynamic response time under the low magnetic field. Both of the Heisenberg model and Landau-Lifshitz-Gilbert equation were used to calculate the magnetic domain motion. Time consumptions were simulated to determine a uniformly magnetized state in Graphene and TbDyFe layers. To ensure the magnetostrictive characteristics, the magnetic moment and the magnetostriction were measured using a fabricated magnetostrictive actuator. Compare to the three-layer TbDyFe films, TbDyFe/Graphene/TbDyFe showed a higher magnetostrictive behavior in response to low coercive forces in the range of 0 to 10 kA/m, even with the addition of low magnetic fields. The dynamic magnetostriction response time was faster than the tri-layered TbDyFe film by approximately 24 millisecond.
将TbDyFe/石墨烯/TbDyFe薄膜的磁机械行为与三层TbDyFe薄膜进行比较，以验证石墨烯薄层对改善磁机械性能以及降低低磁场下动态响应时间的影响。利用海森堡模型和朗道-里夫希茨-吉尔伯特方程计算磁畴运动。模拟了时间消耗，以确定石墨烯层和TbDyFe层中的均匀磁化状态。为确保磁致伸缩特性，使用制造的磁致伸缩致动器测量磁矩和磁致伸缩。与三层TbDyFe薄膜相比，TbDyFe/石墨烯/TbDyFe在0至10 kA/m范围内的低矫顽力响应下表现出更高的磁致伸缩行为，即使在施加低磁场的情况下也是如此。动态磁致伸缩响应时间比三层TbDyFe薄膜快约24毫秒。
