Won Do Young, Nguyen Manh-Cuong, Kim Hyun Min, Tak Nam Kyun, Choi Jin Hyung, Choi Rino, Myoung Jae-Min, Yoon Ho Gyu
Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea.
Department of Materials Science and Engineering, Inha University, Incheon, 22212, Republic of Korea.
J Nanosci Nanotechnol. 2020 Nov 1;20(11):6884-6889. doi: 10.1166/jnn.2020.18806.
A plastic organic light-emitting diode display is a device that emits light in an organic layer in proportion to the amount of current applied from a thin film transistor, which constitutes a pixel. However, it was confirmed that the residual image was shown by the operation of the thin film transistor. To suppress residual image, the effect of electric field was studied in operation of a-IGZO thin film transistor. The a-IGZO thin film transistor, in which a polyimide film was used as a substrate, was applied as a driving thin film transistor for pixel circuits in a plastic organic light-emitting diode display, and the effect of the electric field behavior inside the film on residual images was studied. Residual images were strongly connection with the electric field distribution characteristics inside the polyimide substrate, and they were reduced by introducing an electric field shield metal layer in the a-IGZO thin film transistor. The correlation between residual image generation and the operation of the a-IGZO thin film transistor was further explained through technology computer-aided design simulation (Silvaco Group Inc.).
塑料有机发光二极管显示器是一种在有机层中发光的器件,其发光量与构成像素的薄膜晶体管施加的电流量成比例。然而,通过薄膜晶体管的操作证实出现了残影。为了抑制残影,研究了非晶铟镓锌氧化物(a-IGZO)薄膜晶体管操作中的电场效应。将以聚酰亚胺薄膜为基板的a-IGZO薄膜晶体管用作塑料有机发光二极管显示器中像素电路的驱动薄膜晶体管,并研究了薄膜内部电场行为对残影的影响。残影与聚酰亚胺基板内部的电场分布特性密切相关,通过在a-IGZO薄膜晶体管中引入电场屏蔽金属层可减少残影。通过技术计算机辅助设计模拟(Silvaco集团公司)进一步解释了残影产生与a-IGZO薄膜晶体管操作之间的相关性。