Dargar Shashi K, Srivastava Viranjay M
Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban, 4041, South Africa.
Heliyon. 2019 Apr 8;5(4):e01452. doi: 10.1016/j.heliyon.2019.e01452. eCollection 2019 Apr.
In this research work, Amorphous Indium-Gallium-Zinc-Oxide (α-IGZO) thin-film transistor consisting of Tri-Active Layer (TAL) channel have been designed in a double-gate structure. The electrical performance of the novel device structure has been analyzed with its output and transfer characteristics, at different overlap and offset length between gate and Source-Drain (S-D) contacts. The resulted parameters have a better agreement to the device characteristics including high I/I at offset of the thin-film transistor (TFT) of order , high channel mobility is in overlap, while it is less than for the offset TFTs. The superior electrical behavior of the novel double-gate TAL TFT have been incorporated. Later on, the device application in a new Active Matrix -Organic Light Emitting Diode (AMOLED) pixel circuit has been proposed.
在这项研究工作中，具有三有源层（TAL）沟道的非晶铟镓锌氧化物（α-IGZO）薄膜晶体管被设计成双栅结构。针对栅极与源漏（S-D）接触之间不同的重叠和偏移长度，通过其输出和转移特性对这种新型器件结构的电学性能进行了分析。所得参数与器件特性具有更好的一致性，包括薄膜晶体管（TFT）在偏移时具有高的I/I，在重叠时沟道迁移率高，而对于偏移的TFT则小于 。新型双栅TAL TFT具有优异的电学性能。随后，提出了该器件在新型有源矩阵有机发光二极管（AMOLED）像素电路中的应用。
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