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薄膜厚度对用于检测ppm级硫化氢气体的SnO₂基气体传感器传感性能的影响。

Effects of Thin-Film Thickness on Sensing Properties of SnO₂-Based Gas Sensors for the Detection of H₂S Gas at ppm Levels.

作者信息

Jo Seong Bin, Kim Hyun Ji, Ahn Joong Hee, Hwang Byung Wook, Huh Jeung Soo, Ragupathy Dhanusuraman, Lee Soo Chool, Kim Jae Chang

机构信息

Research Institute of Advanced Energy Technology, Kyungpook National University Daegu 41566, Republic of Korea.

Department of Chemical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.

出版信息

J Nanosci Nanotechnol. 2020 Nov 1;20(11):7169-7174. doi: 10.1166/jnn.2020.18854.

Abstract

SnO₂ thin-film gas sensors were easily created using the ion sputtering technique. The as-deposited SnO₂ thin films consist of a tetragonal SnO₂ phase and densely packed nanosized grains with diameters of approximately 20-80 nm, which are separated by microcracks. The as-deposited SnO₂ thin film is well crystallized, with a dense columnar nanostructure grown directly onto the alumina material and the Pt electrodes. The grain size and thickness of SnO₂ thin films are easily controlled by varying the sputtering time of the ion coater. The responses of the SnO₂ thin-film sensors decrease as the SnO₂ film thickness is increased, indicating that a negative association exists between the sensor response and the SnO₂ film thickness due to gas diffusion from the surface. The SnO₂ thin-film sensor, which was created by ion sputtering for 10 min, shows an excellent sensor response where Ra is the electric resistance under air and is the electric resistance under the test gas) for detecting 1 ppm H₂S at 350°C.

摘要

采用离子溅射技术可轻松制备二氧化锡薄膜气体传感器。沉积态的二氧化锡薄膜由四方相二氧化锡和直径约为20 - 80纳米的紧密堆积纳米晶粒组成,这些晶粒被微裂纹分隔开。沉积态的二氧化锡薄膜结晶良好,具有直接生长在氧化铝材料和铂电极上的致密柱状纳米结构。通过改变离子镀膜机的溅射时间,可轻松控制二氧化锡薄膜的晶粒尺寸和厚度。随着二氧化锡薄膜厚度的增加,二氧化锡薄膜传感器的响应降低,这表明由于气体从表面扩散,传感器响应与二氧化锡薄膜厚度之间存在负相关关系。通过离子溅射10分钟制备的二氧化锡薄膜传感器在350°C下检测1 ppm硫化氢时表现出优异的传感器响应(其中Ra是空气中的电阻, 是测试气体中的电阻)。

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