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基于CsPb(BrI)钙钛矿与MoS混合结构的感官适应及神经形态光电晶体管

Sensory Adaptation and Neuromorphic Phototransistors Based on CsPb(BrI) Perovskite and MoS Hybrid Structure.

作者信息

Hong Seongin, Choi Seung Hee, Park Jongsun, Yoo Hocheon, Oh Joo Youn, Hwang Euyheon, Yoon Dae Ho, Kim Sunkook

机构信息

School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do 16419, Republic of Korea.

School of Electrical Engineering, Korea University, Seoul 136-713, Republic of Korea.

出版信息

ACS Nano. 2020 Aug 25;14(8):9796-9806. doi: 10.1021/acsnano.0c01689. Epub 2020 Jul 10.

DOI:10.1021/acsnano.0c01689
PMID:32628447
Abstract

Sensory adaptation is an essential part of biological neural systems for sustaining human life. Using the light-induced halide phase segregation of CsPb(BrI) perovskite, we introduce neuromorphic phototransistors that emulate human sensory adaptation. The phototransistor based on a hybrid structure of perovskite and transition-metal dichalcogenide (TMD) emulates the sensory adaptation in response to a continuous light stimulus, similar to the neural system. The underlying mechanism for the sensory adaptation is the halide segregation of the mixed halide perovskites. The phase separation under visible-light illumination leads to the segregation of I and Br into separate iodide- and bromide-rich domains, significantly changing the photocurrent in the phototransistors. The devices are reversible upon the removal of the light stimulation, resulting in near-complete recovery of the photosensitivity before the phase segregation (sensitivity recovery of 96.65% for 5 min rest time). The proposed phototransistor based on the perovskite-TMD hybrid structure can be applied to other neuromorphic devices such as neuromorphic photonic devices, intelligent sensors, and selective light-detecting image sensors.

摘要

感觉适应是维持人类生命的生物神经系统的重要组成部分。利用光诱导的CsPb(BrI)钙钛矿卤化物相分离,我们引入了模拟人类感觉适应的神经形态光电晶体管。基于钙钛矿和过渡金属二卤化物(TMD)混合结构的光电晶体管模拟了对连续光刺激的感觉适应,类似于神经系统。感觉适应的潜在机制是混合卤化物钙钛矿的卤化物分离。可见光照射下的相分离导致I和Br分离成富含碘化物和溴化物的单独区域,显著改变了光电晶体管中的光电流。去除光刺激后,器件是可逆的,导致相分离前的光敏性几乎完全恢复(5分钟休息时间的灵敏度恢复率为96.65%)。所提出的基于钙钛矿-TMD混合结构的光电晶体管可应用于其他神经形态器件,如神经形态光子器件、智能传感器和选择性光探测图像传感器。

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