Gong Guodong, Zhou You, Xiong Ziyu, Sun Tao, Li Huaxin, Li Qingxiu, Zhao Wenyu, Zhang Guohua, Zhai Yongbiao, Lv Ziyu, Tan Hongwei, Zhou Ye, Han Su-Ting
Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China.
College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
Adv Mater. 2024 Dec;36(50):e2409844. doi: 10.1002/adma.202409844. Epub 2024 Oct 30.
Machine vision systems that consist of cameras and image-processing components for visual inspection and identification tasks play a critical role in various intelligent applications, including pilotless vehicles and surveillance systems. However, current systems usually possess a limited dynamic range and fixed photoresponsivity, restricting their capability of gaining high-fidelity images when encoding a high-contrast scene. Here, it is shown that a photovoltaic memristor incorporating two antagonistic photovoltaic junctions can autonomously adjust its response to varying light stimuli, enabling the amplification of shadows and inhibition of highlight saturation. Due to the dynamic photodoping effect at the p-n junction with an asymmetrical profile, the photocurrent polarities of the antagonistic memristor can be changed as the light intensity increases. The light-intensity-dependent switchable photovoltaic behaviors match Weber's law where photosensitivity is inversely proportional to the light stimuli. An 11 × 11 memristor array is used to detect a high-contrast scene with light intensities ranging from 1 to 5 × 10 µW cm, achieving a similar active contrast adaptation performance compared with the human visual systems (less than 1.2 s at 94 dB). This work paves the way for innovative neuromorphic device designs and may lead to the development of state-of-the-art active visual adaptation photosensors.
由用于视觉检测和识别任务的摄像头及图像处理组件组成的机器视觉系统,在包括无人驾驶车辆和监控系统在内的各种智能应用中发挥着关键作用。然而,当前系统通常具有有限的动态范围和固定的光响应性,限制了它们在编码高对比度场景时获取高保真图像的能力。在此,研究表明,一种包含两个对抗性光伏结的光伏忆阻器能够自主调整其对变化光刺激的响应,实现阴影放大和高光饱和度抑制。由于具有不对称分布的 p-n 结处的动态光掺杂效应,随着光强度增加,对抗性忆阻器的光电流极性会发生变化。这种与光强度相关的可切换光伏行为符合韦伯定律,即光敏度与光刺激成反比。一个 11×11 的忆阻器阵列用于检测光强度范围为 1 至 5×10 μW/cm 的高对比度场景,与人类视觉系统相比,实现了类似的主动对比度适应性能(在 94 dB 时小于 1.2 秒)。这项工作为创新的神经形态器件设计铺平了道路,并可能导致最先进的主动视觉适应光传感器的发展。