Chen Fang-Ming, Huang Man-Fang, Chang Jih-Yuan, Kuo Yen-Kuang
Opt Lett. 2020 Jul 1;45(13):3749-3752. doi: 10.1364/OL.397140.
Effects of the number of quantum wells (QWs) and Shockley-Read-Hall (SRH) recombination in deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated theoretically. Simulation results show that, for DUV LEDs with high crystalline quality, light output power increases with an increasing number of QWs. As for the DUV LEDs with poor crystalline quality, light output power may decrease with an increasing number of QWs due to the deteriorated SRH recombination. The injection current density is also an important factor regarding the impact of the number of QWs. When operated at low current density, for the DUV LED with poor crystalline quality, light output power may decrease with an increasing number of QWs.
从理论上研究了量子阱（QW）数量和深紫外（DUV）发光二极管（LED）中的肖克利-里德-霍尔（SRH）复合效应。模拟结果表明，对于具有高晶体质量的DUV LED，光输出功率随着量子阱数量的增加而增加。对于晶体质量较差的DUV LED，由于SRH复合恶化，光输出功率可能会随着量子阱数量的增加而降低。注入电流密度也是影响量子阱数量的一个重要因素。当在低电流密度下工作时，对于晶体质量较差的DUV LED，光输出功率可能会随着量子阱数量的增加而降低。
