Wei Shenqi, Wang Chenglong, Long Xuefeng, Wang Tong, Wang Peng, Zhang Mingrui, Li Shuwen, Ma Jiantai, Jin Jun, Wu Lan
State Key Laboratory of Applied Organic Chemistry (SKLAOC), The Key Laboratory of Catalytic Engineering of Gansu Province, College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, Gansu 730000, P. R. China.
College of Chemical Engineering, Northwest University for Nationalities, Lanzhou, Gansu 730030, P.R. China.
Nanoscale. 2020 Jul 23;12(28):15193-15200. doi: 10.1039/d0nr04473c.
The photoelectrochemical (PEC) water reduction performance of CuBi2O4 (CBO)-based photocathodes is still far from their theoretical values due to low bulk and surface charge separation efficiencies. Herein, we propose a regrowth strategy to prepare a photocathode with CBO coating on Zn-doped CBO (CBO/Zn-CBO). Furthermore, NaBH4 treatment of CBO/Zn-CBO introduced oxygen vacancies (Ov) on CBO/Zn-CBO. It was found that Zn-doping not only increases the charge carrier concentration of CBO, but also leads to appropriate band alignment to form homojunctions. This homojunction can effectively promote the separation of electron-hole pairs, thus obtaining excellent photocurrent density (0.5 mA cm-2 at 0.3 V vs. RHE) and charge separation efficiency (1.5 times than CBO). The following surface treatment induced Ov on CBO/Zn-CBO, which significantly increased the active area of the surface catalytic reaction and further enhanced the photocurrent density (0.6 mA cm-2). In the absence of cocatalysts, the electron injection efficiency of Ov/CBO/Zn-CBO was 1.47 times improved than that of CBO. This work demonstrates a homojunction photocathode with Ov modulation, which provides a new view for future photoelectrochemical water splitting.
由于体电荷和表面电荷分离效率较低,基于CuBi2O4(CBO)的光阴极的光电化学(PEC)水还原性能仍远低于其理论值。在此,我们提出了一种再生长策略,以制备一种在Zn掺杂的CBO(CBO/Zn-CBO)上涂覆CBO的光阴极。此外,对CBO/Zn-CBO进行NaBH4处理在CBO/Zn-CBO上引入了氧空位(Ov)。研究发现,Zn掺杂不仅增加了CBO的载流子浓度,还导致了合适的能带排列以形成同质结。这种同质结可以有效地促进电子-空穴对的分离,从而获得优异的光电流密度(在0.3 V vs. RHE下为0.5 mA cm-2)和电荷分离效率(是CBO的1.5倍)。随后的表面处理在CBO/Zn-CBO上诱导产生了Ov,这显著增加了表面催化反应的活性面积,并进一步提高了光电流密度(0.6 mA cm-2)。在没有助催化剂的情况下,Ov/CBO/Zn-CBO的电子注入效率比CBO提高了1.47倍。这项工作展示了一种具有Ov调制的同质结光阴极,为未来的光电化学水分解提供了新的视角。