Lian Yafei, Cai Dongting, Sui Tingting, Xu Mingxia, Zhao Yuan'an, Sun Xun, Shao Jianda
Opt Express. 2020 Jun 22;28(13):18814-18828. doi: 10.1364/OE.389506.
High-quality ammonium dihydrogen phosphate (NHHPO, ADP) crystals were grown in Z direction and in defined crystallographic direction (θ=90°, φ=45°) by the rapid growth method, respectively. Defect-induced damage behavior in 355 nm of three types of ADP samples cutting in type-II matching and third harmonic generation direction from the as-grown crystals were investigated, including the initial laser induced damage (LID) characteristics and the physical and chemical properties of defects which serve as the damage precursors. The evaluations of damage behaviors include the "sampling" laser induced damage threshold (LIDT) by 1-on-1 and R-on-1 methods, bulk damage growth and bulk damage morphology. UV-visible transmittance spectrum, ultraviolet absorption spectrum, fluorescence spectrum, positron annihilation spectrum and the online light scattering measurements were carried out to investigate the defect-induced damage behavior in ADP crystals. The study will provide a reference for the investigations on laser induced damage properties of ADP crystals in short wavelength.
采用快速生长法分别沿Z方向和特定晶体学方向（θ=90°，φ=45°）生长出了高质量的磷酸二氢铵（NH₄H₂PO₄，ADP）晶体。研究了从生长态晶体上沿Ⅱ类匹配和三倍频方向切割的三种类型ADP样品在355nm处由缺陷引起的损伤行为，包括初始激光诱导损伤（LID）特性以及作为损伤前驱体的缺陷的物理和化学性质。损伤行为的评估包括通过1对1和R对1方法的“抽样”激光诱导损伤阈值（LIDT）、体损伤增长和体损伤形貌。进行了紫外可见透射光谱、紫外吸收光谱、荧光光谱、正电子湮没光谱以及在线光散射测量，以研究ADP晶体中由缺陷引起的损伤行为。该研究将为短波下ADP晶体激光诱导损伤特性的研究提供参考。
