Su Yurong, Zhang Jia, Hong Jeongmin, You Long
School of Optical and Electronic Information, Huazhong University of Science and Technology, 430074 Wuhan, People's Republic of China.
School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, 430074 Wuhan, People's Republic of China.
J Phys Condens Matter. 2020 Aug 17;32(45). doi: 10.1088/1361-648X/aba721.
The development of ultralow power and high density nonvolatile magnetic random access memory stimulates the search for promising materials in magnetic tunnel junction with large voltage-controlled magnetic anisotropy (VCMA) efficiency. In this work, we investigate the 4and 5transition metal interlayer effect on perpendicular magnetic anisotropy (PMA) and VCMA at Fe/MgO interface by using first-principles calculations. Large PMA more than 11 mJ mis found at Fe/MgO interface with Pt insertion layer and the mechanism for PMA is clarified based on the second order perturbation theory. Furthermore, we find that the magnitude and the sign of VCMA efficiency are varied by introducing different insertions at Fe/MgO interface. The Re and Os interlayers lead to a sizable increase in both of the PMA and the VCMA coefficient. Our findings may further emphasize the essential importance of the interface structure on PMA and VCMA and may offer new material platforms for low-power consumption spintronic devices.
超低功耗和高密度非易失性磁随机存取存储器的发展激发了人们对具有大电压控制磁各向异性（VCMA）效率的磁隧道结中有前景材料的探索。在这项工作中，我们通过第一性原理计算研究了4族和5族过渡金属夹层对Fe/MgO界面处垂直磁各向异性（PMA）和VCMA的影响。在具有Pt插入层的Fe/MgO界面处发现了大于11 mJ/m²的大PMA，并基于二阶微扰理论阐明了PMA的机制。此外，我们发现通过在Fe/MgO界面引入不同的插入层，VCMA效率的大小和符号会发生变化。Re和Os夹层导致PMA和VCMA系数都有显著增加。我们的发现可能会进一步强调界面结构对PMA和VCMA的至关重要性，并可能为低功耗自旋电子器件提供新的材料平台。
