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熔盐辅助合成铋纳米片用于将CO长期连续电催化转化为甲酸盐

Molten-Salt-Assisted Synthesis of Bismuth Nanosheets for Long-term Continuous Electrocatalytic Conversion of CO to Formate.

作者信息

Yi Luocai, Chen Junxiang, Shao Ping, Huang Junheng, Peng Xinxin, Li Junwei, Wang Genxiang, Zhang Chi, Wen Zhenhai

机构信息

CAS, Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China.

University of Chinese Academy of Science, Beijing, 100049, China.

出版信息

Angew Chem Int Ed Engl. 2020 Nov 2;59(45):20112-20119. doi: 10.1002/anie.202008316. Epub 2020 Aug 28.

DOI:10.1002/anie.202008316
PMID:32686329
Abstract

Two-dimensional (2D) monometallic pnictogens (antimony or Sb, and bismuth or Bi) nanosheets demonstrate potential in a variety of fields, including quantum devices, catalysis, biomedicine and energy, because of their unique physical, chemical, electronic and optical properties. However, the development of general and high-efficiency preparative routes toward high-quality pnictogen nanosheets is challenging. A general method involving a molten-salt-assisted aluminothermic reduction process is reported for the synthesis of Sb and Bi nanosheets in high yields (>90 %). Electrocatalytic CO reduction was investigated on the Bi nanosheets, and high catalytic selectively to formate was demonstrated with a considerable current density at a low overpotential and an impressive stability. Bi nanosheets continuously convert CO into formate in a flow cell operating for one month, with a yield rate of 787.5 mmol cm  h . Theoretical results suggest that the edge sites of Bi are far more active than the terrace sites.

摘要

二维(2D)单金属氮族元素(锑或Sb,以及铋或Bi)纳米片由于其独特的物理、化学、电子和光学性质,在包括量子器件、催化、生物医学和能源等各种领域展现出潜力。然而,开发通用且高效的高质量氮族元素纳米片制备路线具有挑战性。本文报道了一种涉及熔盐辅助铝热还原过程的通用方法,可高产率(>90%)合成Sb和Bi纳米片。对Bi纳米片上的电催化CO还原进行了研究,结果表明在低过电位下具有相当大的电流密度和令人印象深刻的稳定性,对甲酸盐具有高催化选择性。在运行一个月的流动池中,Bi纳米片能持续将CO转化为甲酸盐,产率为787.5 mmol cm  h 。理论结果表明,Bi的边缘位点比平台位点活性高得多。

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