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拓扑绝缘体中的近邻诱导奇频超导性

Proximity-Induced Odd-Frequency Superconductivity in a Topological Insulator.

作者信息

Krieger Jonas A, Pertsova Anna, Giblin Sean R, Döbeli Max, Prokscha Thomas, Schneider Christof W, Suter Andreas, Hesjedal Thorsten, Balatsky Alexander V, Salman Zaher

机构信息

Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland.

Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland.

出版信息

Phys Rev Lett. 2020 Jul 10;125(2):026802. doi: 10.1103/PhysRevLett.125.026802.

DOI:10.1103/PhysRevLett.125.026802
PMID:32701330
Abstract

At an interface between a topological insulator (TI) and a conventional superconductor (SC), superconductivity has been predicted to change dramatically and exhibit novel correlations. In particular, the induced superconductivity by an s-wave SC in a TI can develop an order parameter with a p-wave component. Here we present experimental evidence for an unexpected proximity-induced novel superconducting state in a thin layer of the prototypical TI, Bi_{2}Se_{3} proximity coupled to Nb. From depth-resolved magnetic field measurements below the superconducting transition temperature of Nb, we observe a local enhancement of the magnetic field in Bi_{2}Se_{3} that exceeds the externally applied field, thus supporting the existence of an intrinsic paramagnetic Meissner effect arising from an odd-frequency superconducting state. Our experimental results are complemented by theoretical calculations supporting the appearance of such a component at the interface which extends into the TI. This state is topologically distinct from the conventional Bardeen-Cooper-Schrieffer state it originates from. To the best of our knowledge, these findings present a first observation of bulk odd-frequency superconductivity in a TI. We thus reaffirm the potential of the TI-SC interface as a versatile platform to produce novel superconducting states.

摘要

在拓扑绝缘体(TI)与传统超导体(SC)的界面处,据预测超导性会发生显著变化并展现出新奇的关联特性。特别地,s波超导体在拓扑绝缘体中诱导出的超导性能够产生具有p波分量的序参量。在此,我们展示了在与铌(Nb)近邻耦合的典型拓扑绝缘体Bi₂Se₃薄层中,出现意外的近邻诱导新奇超导态的实验证据。通过在铌的超导转变温度以下进行深度分辨磁场测量,我们观察到Bi₂Se₃中磁场的局部增强超过了外部施加的磁场,从而支持了由奇频超导态产生的本征顺磁迈斯纳效应的存在。我们的实验结果得到理论计算的补充,理论计算支持在界面处出现这种延伸到拓扑绝缘体中的分量。这种状态在拓扑结构上与它所源自的传统巴丁 - 库珀 - 施里弗尔(BCS)态不同。据我们所知,这些发现首次观测到了拓扑绝缘体中的体奇频超导性。因此,我们再次确认了拓扑绝缘体 - 超导体界面作为产生新奇超导态的通用平台的潜力。

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