Kavitha K, Urade Akanksha R, Kaur Gurjinder, Lahiri Indranil
Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, India.
Nanomaterials and Applications Laboratory, Department of Metallurgical and Materials Engineering, Indian Institute of Technology Roorkee, Roorkee 247667, India.
J Nanosci Nanotechnol. 2020 Dec 1;20(12):7698-7704. doi: 10.1166/jnn.2020.18862.
A two-step, low-temperature thermal chemical vapor deposition (CVD) process, which uses camphor for synthesizing continuous graphene layer on Cu substrate is reported. The growth process was performed at lower temperature (800 °C) using camphor as the source of carbon. A threezone CVD system was used for controlled heating of precursor, in order to obtain uniform graphene layer. As-grown samples were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The results show the presence of 4-5 layers of graphene. As-grown graphene transferred onto a glass substrate through a polymer-free wet-etching process, demonstrated transmittance ~91% in visible spectra. This process of synthesizing large area, 4-5 layer graphene at reduced temperature represents an energy-efficient method of producing graphene for possible applications in opto-electronic industry.
报道了一种两步低温热化学气相沉积（CVD）工艺，该工艺使用樟脑在铜衬底上合成连续的石墨烯层。生长过程在较低温度（800°C）下进行，使用樟脑作为碳源。采用三区CVD系统对前驱体进行控制加热，以获得均匀的石墨烯层。对生长后的样品进行了X射线衍射（XRD）、拉曼光谱和透射电子显微镜（TEM）表征。结果表明存在4-5层石墨烯。通过无聚合物湿法蚀刻工艺将生长后的石墨烯转移到玻璃衬底上，在可见光谱中显示出约91%的透过率。这种在降低温度下合成大面积4-5层石墨烯的工艺代表了一种节能方法，可用于生产石墨烯，有望应用于光电子工业。
