Xu Chen, Li Chuanping, Jin Yongdong
State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, Jilin, 130022, China.
School of Chemistry and Materials Science, University of Science and Technology of China (USTC), Hefei, Anhui, 230026, China.
Small. 2020 Aug;16(34):e2002727. doi: 10.1002/smll.202002727. Epub 2020 Jul 26.
A novel negative differential resistance (NDR) phenomenon is reported herein based on planar plasmonic tunnel junction, resulting from plasmon-assisted long-range electron tunneling (P-tunneling) and electronic caching effect of Au@SiO nanoparticles. The tunnel junction is made of shell-insulated Au@SiO nanoparticle nanomembrane, in which SiO shells act as a tunable tunneling barrier, while the Au core not only support the plasmonic effect to enable P-tunneling, but also act as electronic caches to render NDR responses. The NDR peak voltage and current can be programmably controlled by varying the thickness of SiO shell and the size of Au core to tune barrier level for electron transport. In addition, light induced plasmonic effect can be further managed to regulate the NDR behavior by fine-tuning P-tunneling. The phenomenon is exploited for robust use as memristors. The work provides a new mechanism for the generation of NDR effect and may open a way for the development of robust and new conceptual nanoelectronic devices.
本文报道了一种基于平面等离子体隧道结的新型负微分电阻（NDR）现象，该现象由等离子体辅助的远程电子隧穿（P-隧穿）和Au@SiO纳米颗粒的电子缓存效应引起。隧道结由壳层绝缘的Au@SiO纳米颗粒纳米膜制成，其中SiO壳层充当可调谐的隧穿势垒，而Au核不仅支持等离子体效应以实现P-隧穿，还充当电子缓存以产生NDR响应。通过改变SiO壳层的厚度和Au核的尺寸来调节电子传输的势垒水平，可以对NDR峰值电压和电流进行可编程控制。此外，通过微调P-隧穿，可以进一步利用光诱导等离子体效应来调节NDR行为。该现象被用于稳健地用作忆阻器。这项工作为NDR效应的产生提供了一种新机制，并可能为开发稳健的新型概念纳米电子器件开辟一条道路。
