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配位数和几何结构在控制铁、钴和镍单离子磁体磁各向异性中的作用。

Role of Coordination Number and Geometry in Controlling the Magnetic Anisotropy in Fe , Co , and Ni Single-Ion Magnets.

作者信息

Sarkar Arup, Dey Sourav, Rajaraman Gopalan

机构信息

Department of Chemistry, Indian Institute of Technology Bombay, Mumbai, 400076, India.

出版信息

Chemistry. 2020 Nov 6;26(62):14036-14058. doi: 10.1002/chem.202003211. Epub 2020 Oct 12.

Abstract

Since the last decade, the focus in the area of single-molecule magnets (SMMs) has been shifting constructively towards the development of single-ion magnets (SIMs) based on transition metals and lanthanides. Although ground-breaking results have been witnessed for Dy -based SIMs, significant results have also been obtained for some mononuclear transition metal SIMs. Among others, studies based on Co ion are very prominent as they often exhibit high magnetic anisotropy or zero-field splitting parameters and offer a large barrier height for magnetisation reversal. Although Co possibly holds the record for having the largest number of zero-field SIMs known for any transition metal ion, controlling the magnetic anisotropy in these systems are is still a challenge. In addition to the modern spectroscopic techniques, theoretical studies, especially ab initio CASSCF/NEVPT2 approaches, have been used to uncover the electronic structure of various Co SIMs. In this article, with some selected examples, the aim is to showcase how varying the coordination number from two to eight, and the geometry around the Co centre alters the magnetic anisotropy. This offers some design principles for the experimentalists to target new generation SIMs based on the Co ion. Additionally, some important Fe /Fe and Ni complexes exhibiting large magnetic anisotropy and SIM properties are also discussed.

摘要

在过去十年中,单分子磁体(SMMs)领域的研究重点已积极转向基于过渡金属和镧系元素的单离子磁体(SIMs)的开发。尽管基于镝的SIMs已取得开创性成果,但一些单核过渡金属SIMs也取得了显著成果。其中,基于钴离子的研究非常突出,因为它们通常表现出高磁各向异性或零场分裂参数,并为磁化反转提供了较大的势垒高度。尽管钴可能在已知的任何过渡金属离子中拥有数量最多的零场SIMs记录,但控制这些体系中的磁各向异性仍然是一个挑战。除了现代光谱技术外,理论研究,特别是从头算CASSCF/NEVPT2方法,已被用于揭示各种钴SIMs的电子结构。在本文中,通过一些选定的例子,目的是展示将钴中心周围的配位数从2变到8以及几何结构如何改变磁各向异性。这为实验人员提供了一些设计原则,以开发基于钴离子的新一代SIMs。此外,还讨论了一些表现出大磁各向异性和SIM性质的重要铁/亚铁和镍配合物。

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