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用于改善聚合物有序性和电荷传输能力的构型无规聚噻吩。

Configurationally Random Polythiophene for Improved Polymer Ordering and Charge-Transporting Ability.

作者信息

Opoku Henry, Lee Ji Hyeon, Nketia-Yawson Benjamin, Bae Seunghwan, Lee Jae-Joon, Ahn Hyungju, Jo Jea Woong

机构信息

Department of Energy and Materials Engineering and Research Center for Photoenergy Harvesting & Conversion Technology (phct), Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul 04620, Republic of Korea.

Green and Sustainable Materials R&D Department, Korea Institute of Industrial Technology (KITECH), Chonan, Chungcheongnam 31056, Republic of Korea.

出版信息

ACS Appl Mater Interfaces. 2020 Sep 9;12(36):40599-40606. doi: 10.1021/acsami.0c11165. Epub 2020 Aug 29.

Abstract

Random polythiophene polymers are characterized by the arbitrary sequences of monomeric units along polymer backbones. These untailored orientations generally result in the twisting of thiophene rings out of the conjugation planarity in addition to steric repulsions experienced among substituted alkyl chains. These tendencies have limited close polymer packing, which has been detrimental to charge transport in these moieties. To ameliorate charge transport in these classes of polymers, we make use of simple Stille coupling polymerization to synthesize highly random polythiophene polymers. We induced a positive microstructural change between polymer chains by attuning the ratio between alkyl-substituted and nonalkyl-substituted monomer units along the backbones. The optimized random polythiophene was found to have enhanced intermolecular interaction, increased size of crystallites, and stronger tendency to take edge orientation compared with both regiorandom and regioregular poly(3-hexylthiophene) polymers. Incorporation of the optimized random polythiophene as an active material in solid-state electrolyte-gated organic field-effect transistors exhibited better performance than the control device using regioregular poly(3-hexylthiophene), with a high hole mobility up to 4.52 cm V s in ambient conditions.

摘要

无规聚噻吩聚合物的特征在于沿着聚合物主链的单体单元的任意序列。这些未经定制的取向通常除了在取代的烷基链之间经历的空间排斥之外,还导致噻吩环扭曲出共轭平面。这些趋势限制了聚合物的紧密堆积,这对这些部分中的电荷传输不利。为了改善这些聚合物类中的电荷传输,我们利用简单的Stille偶联聚合来合成高度无规的聚噻吩聚合物。我们通过调节沿着主链的烷基取代和非烷基取代的单体单元之间的比例,在聚合物链之间诱导了正向的微观结构变化。与区域无规和区域规整的聚(3-己基噻吩)聚合物相比,发现优化的无规聚噻吩具有增强的分子间相互作用、增加的微晶尺寸以及更强的边缘取向趋势。将优化的无规聚噻吩作为活性材料掺入固态电解质门控有机场效应晶体管中,其性能优于使用区域规整的聚(3-己基噻吩)的对照器件,在环境条件下具有高达4.52 cm² V⁻¹ s⁻¹的高空穴迁移率。

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