Zhu Ting, Bai Hui, Zhang Jian, Tan Gangjian, Yan Yonggao, Liu Wei, Su Xianli, Wu Jinsong, Zhang Qingjie, Tang Xinfeng
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, People's Republic of China.
ACS Appl Mater Interfaces. 2020 Sep 2;12(35):39425-39433. doi: 10.1021/acsami.0c10932. Epub 2020 Aug 21.
To recover the low-grade waste heat (300-500 K), it is of urgent importance to develop and improve the thermoelectric performance at a low-temperature region. Herein, we have realized a record high value of 1.4 at 410 K and a record high average value of 0.6 in the temperature interval from 300 to 400 K for Sb-doped AgSbTe ( = 0-0.03) compounds, which show an improvement of 180 and 120% compared to pristine AgTe, respectively. Sb doping increases the carrier concentration and electrical conductivity, leading to a remarkable improvement of electrical transport properties. The AgSbTe sample obtains the maximal power factor of 1.07 × 10 W m K at 410 K, which is increased by 80% in comparison to that of pristine AgTe. Moreover, as a result of the intensified alloying phonon scattering by Sb doping, AgSbTe possesses the minimum lattice thermal conductivity of 0.35 W m K at 300 K, which demonstrates a decline of 57% compared to that of pristine AgTe. All of these produce a great enhancement on the thermoelectric performance of AgTe materials, which shows great potential in the application of recycling the low-grade waste heat at a low-temperature region.
为了回收低温废热（300 - 500 K），开发并提高低温区域的热电性能至关重要。在此，我们在410 K时实现了掺锑的AgSbTe（ = 0 - 0.03）化合物创纪录的1.4的高值，以及在300至400 K温度区间创纪录的0.6的高平均值，与原始AgTe相比，分别提高了180%和120%。锑掺杂增加了载流子浓度和电导率，显著改善了电输运性能。AgSbTe样品在410 K时获得了1.07×10 W m K的最大功率因子，与原始AgTe相比提高了80%。此外，由于锑掺杂增强了合金化声子散射，AgSbTe在300 K时具有0.35 W m K的最低晶格热导率，与原始AgTe相比下降了57%。所有这些都极大地提高了AgTe材料的热电性能，在低温区域回收低品位废热的应用中显示出巨大潜力。
