Hong Seonghwan, Na Jae Won, Lee I Sak, Kim Hyung Tae, Kang Byung Ha, Chung Jusung, Kim Hyun Jae
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Korea.
ACS Appl Mater Interfaces. 2020 Sep 2;12(35):39705-39712. doi: 10.1021/acsami.0c07091. Epub 2020 Aug 19.
A simple fabrication method for homojunction-structured Al-doped indium-tin oxide (ITO) thin-film transistors (TFTs) using an electrohydrodynamic (EHD) jet-printed AlO passivation layer with specific line () is proposed. After EHD jet printing, the specific region of the ITO film below the AlO passivation layer changes from a conducting electrode to a semiconducting channel layer simultaneously upon the formation of the passivation layer during thermal annealing. The channel length of the fabricated TFTs is defined by , which can be easily changed with varying EHD jet printing conditions, i.e., no need of replacing the mask for varying patterns. Accordingly, the drain current and resistance of the fabricated TFTs can be modified by varying the . Using the proposed method, a transparent n-type metal-oxide-semiconductor (NMOS) inverter with an enhancement load can be fabricated; the effective resistance of load and drive TFTs is easily tuned by varying the processing conditions using this simple method. The fabricated NMOS inverter exhibits an output voltage gain of 7.13 with a supply voltage of 10 V. Thus, the proposed approach is promising as a low-cost and flexible manufacturing system for multi-item small-lot-sized production of Internet of Things devices.
提出了一种简单的制造方法，用于制备具有同质结结构的铝掺杂铟锡氧化物（ITO）薄膜晶体管（TFT），该方法使用具有特定线条（）的电流体动力学（EHD）喷射印刷AlO钝化层。在EHD喷射印刷之后，在热退火期间形成钝化层时，AlO钝化层下方的ITO膜的特定区域同时从导电电极变为半导体沟道层。所制造的TFT的沟道长度由确定，其可以随着EHD喷射印刷条件的变化而容易地改变，即无需更换用于改变图案的掩模。因此，可以通过改变来改变所制造的TFT的漏极电流和电阻。使用所提出的方法，可以制造具有增强负载的透明n型金属氧化物半导体（NMOS）反相器；通过使用这种简单方法改变处理条件，可以容易地调整负载和驱动TFT的有效电阻。所制造的NMOS反相器在10V的电源电压下表现出7.13的输出电压增益。因此，所提出的方法有望成为一种低成本且灵活的制造系统，用于物联网设备的多品种小批量生产。
