Liu Haining, Wang Xinsheng, Wu Juanxia, Chen Yuansha, Wan Jing, Wen Rui, Yang Jinbo, Liu Ying, Song Zhigang, Xie Liming
CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China.
University of Chinese Academy of Sciences, Beijing 100049, China.
ACS Nano. 2020 Aug 25;14(8):10544-10551. doi: 10.1021/acsnano.0c04499. Epub 2020 Aug 7.
The recent discovery of van der Waals magnetic materials has attracted great attention in materials science and spintronics. The preparation of ultrathin magnetic layers down to atomic thickness is challenging and is mostly by mechanical exfoliation. Here, we report vapor deposition of magnetic van der Waals NiI crystals. Two-dimensional (2D) NiI flakes are grown on SiO/Si substrates with a thickness of 5-40 nm and on hexagonal boron nitride (-BN) down to monolayer thickness. Temperature-dependent Raman spectroscopy reveals robust magnetic phase transitions in the as-grown 2D NiI crystals down to trilayer. Electrical measurements show a semiconducting transport behavior with a high on/off ratio of 10 for the NiI flakes. Lastly, density functional theory calculation shows an intralayer ferromagnetic and interlayer antiferromagnetic ordering in 2D NiI. This work provides a feasible approach to epitaxy 2D magnetic transition metal halides and also offers atomically thin materials for spintronic devices.
范德华磁性材料的最新发现引起了材料科学和自旋电子学领域的极大关注。制备原子厚度的超薄磁性层具有挑战性,且大多通过机械剥离法实现。在此,我们报告了磁性范德华NiI晶体的气相沉积。二维(2D)NiI薄片生长在厚度为5 - 40纳米的SiO/Si衬底上以及直至单层厚度的六方氮化硼(h-BN)上。温度相关的拉曼光谱揭示了生长态的二维NiI晶体直至三层时都存在稳健的磁相变。电学测量表明NiI薄片具有半导体输运行为,开/关比高达10。最后,密度泛函理论计算表明二维NiI中存在层内铁磁和层间反铁磁有序排列。这项工作为外延生长二维磁性过渡金属卤化物提供了一种可行方法,也为自旋电子器件提供了原子级薄的材料。