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二维范德华多铁性材料中铁电性与反铁电性的共存

Coexistence of ferroelectricity and antiferroelectricity in 2D van der Waals multiferroic.

作者信息

Wu Yangliu, Zeng Zhaozhuo, Lu Haipeng, Han Xiaocang, Yang Chendi, Liu Nanshu, Zhao Xiaoxu, Qiao Liang, Ji Wei, Che Renchao, Deng Longjiang, Yan Peng, Peng Bo

机构信息

National Engineering Research Center of Electromagnetic Radiation Control Materials and Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.

School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China.

出版信息

Nat Commun. 2024 Oct 4;15(1):8616. doi: 10.1038/s41467-024-53019-5.

DOI:10.1038/s41467-024-53019-5
PMID:39366986
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11452644/
Abstract

Multiferroic materials have been intensively pursued to achieve the mutual control of electric and magnetic properties. The breakthrough progress in 2D magnets and ferroelectrics encourages the exploration of low-dimensional multiferroics, which holds the promise of understanding inscrutable magnetoelectric coupling and inventing advanced spintronic devices. However, confirming ferroelectricity with optical techniques is challenging in 2D materials, particularly in conjunction with antiferromagnetic orders in single- and few-layer multiferroics. Here, we report the discovery of 2D vdW multiferroic with out-of-plane ferroelectric polarization in trilayer NiI device, as revealed by scanning reflective magnetic circular dichroism microscopy and ferroelectric hysteresis loops. The evolution between ferroelectric and antiferroelectric phases has been unambiguously observed. Moreover, the magnetoelectric interaction is directly probed by magnetic control of the multiferroic domain switching. This work opens up opportunities for exploring multiferroic orders and multiferroic physics at the limit of single or few atomic layers, and for creating advanced magnetoelectronic devices.

摘要

多铁性材料一直是人们积极追求的目标,旨在实现电性能和磁性能的相互控制。二维磁体和铁电体的突破性进展激发了对低维多铁性材料的探索,这有望帮助理解难以捉摸的磁电耦合现象,并发明先进的自旋电子器件。然而,利用光学技术在二维材料中确认铁电性具有挑战性,特别是在单层和少层多铁性材料中与反铁磁序相结合的情况下。在此,我们报告了通过扫描反射磁圆二色显微镜和铁电滞回环揭示的在三层NiI器件中具有面外铁电极化的二维范德华多铁性材料的发现。已经明确观察到铁电相和反铁电相之间的演变。此外,通过多铁性畴切换的磁控直接探测了磁电相互作用。这项工作为在单原子层或少数原子层极限下探索多铁性序和多铁性物理,以及制造先进的磁电子器件开辟了机会。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d5b5/11452644/d6651e810954/41467_2024_53019_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d5b5/11452644/87c5ec557fed/41467_2024_53019_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d5b5/11452644/42089c779c6d/41467_2024_53019_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d5b5/11452644/85eebc324a84/41467_2024_53019_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d5b5/11452644/d6651e810954/41467_2024_53019_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d5b5/11452644/87c5ec557fed/41467_2024_53019_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d5b5/11452644/42089c779c6d/41467_2024_53019_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d5b5/11452644/85eebc324a84/41467_2024_53019_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d5b5/11452644/d6651e810954/41467_2024_53019_Fig4_HTML.jpg

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本文引用的文献

1
Atomic-Scale Visualization of Multiferroicity in Monolayer NiI.单层NiI中多铁性的原子尺度可视化
Adv Mater. 2024 May;36(18):e2311342. doi: 10.1002/adma.202311342. Epub 2024 Feb 5.
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Realistic Spin Model for Multiferroic NiI_{2}.多铁性NiI₂的现实自旋模型
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