二维金属二硒化钒的范德瓦尔斯外延生长及其超高电导率。
Van der Waals Epitaxial Growth of 2D Metallic Vanadium Diselenide Single Crystals and their Extra-High Electrical Conductivity.
机构信息
Center for Nanochemistry (CNC), Academy for Advanced Interdisciplinary Studies, Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China.
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing, 100871, P. R. China.
出版信息
Adv Mater. 2017 Oct;29(37). doi: 10.1002/adma.201702359. Epub 2017 Aug 14.
2D metallic transition-metal dichalcogenides (MTMDs) have recently emerged as a new class of materials for the engineering of novel electronic phases, 2D superconductors, magnets, as well as novel electronic applications. However, the mechanical exfoliation route is predominantly used to obtain such metallic 2D flakes, but the batch production remains challenging. Herein, the van der Waals epitaxial growth of monocrystalline, 1T-phase, few-layer metallic VSe nanosheets on an atomically flat mica substrate via a "one-step" chemical vapor deposition method is reported. The thickness of the VSe nanosheets is precisely tuned from several nanometers to several tenths of nanometers. More significantly, the 2D VSe single crystals are found to present an excellent metallic feature, as evidenced by the extra-high electrical conductivity of up to 10 S m , 1-4 orders of magnitude higher than that of various conductive 2D materials. The thickness-dependent charge-density-wave phase transitions are also examined through low-temperature transport measurements, which reveal that the synthesized 2D metallic 1T-VSe nanosheets should serve as good research platforms for the detecting novel many-body states. These results open a new path for the synthesis and property investigations of nanoscale-thickness 2D MTMDs crystals.
2D 金属过渡金属二卤族化合物 (MTMDs) 最近成为了一种新型材料,可用于工程学中的新型电子相、二维超导体、磁体以及新型电子应用。然而,机械剥落是目前主要用来获取这种金属 2D 薄片的方法,但批量生产仍然具有挑战性。在此,我们通过“一步”化学气相沉积法,在原子级平坦的云母基底上,外延生长出单晶、1T 相、几层金属 VSe 纳米片。通过这种方法,我们可以精确地调控 VSe 纳米片的厚度,从几纳米到几十纳米。更重要的是,我们发现二维 VSe 单晶具有出色的金属特性,其电导率高达 10 S m ,比各种导电二维材料高出 1-4 个数量级,这一结果为其提供了证据。通过低温输运测量,我们还研究了厚度相关的电荷密度波相变,这表明合成的二维金属 1T-VSe 纳米片应该可以作为探测新型多体状态的良好研究平台。这些结果为纳米厚度 2D MTMD 晶体的合成和性能研究开辟了新的途径。