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钠离子通道 NaV1.1、NaV1.2 和 NaV1.6 的突变密度存在可变模式,表明与儿童癫痫相关的通道特异性功能差异。

Variable patterns of mutation density among NaV1.1, NaV1.2 and NaV1.6 point to channel-specific functional differences associated with childhood epilepsy.

机构信息

Graduate Program in Genetics, University of Arizona, Tucson, Arizona, United States of America.

Department of Mathematics, University of Arizona, Tucson, Arizona, United States of America.

出版信息

PLoS One. 2020 Aug 26;15(8):e0238121. doi: 10.1371/journal.pone.0238121. eCollection 2020.

DOI:10.1371/journal.pone.0238121
PMID:32845893
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7449494/
Abstract

Variants implicated in childhood epilepsy have been identified in all four voltage-gated sodium channels that initiate action potentials in the central nervous system. Previous research has focused on the functional effects of particular variants within the most studied of these channels (NaV1.1, NaV1.2 and NaV1.6); however, there have been few comparative studies across channels to infer the impact of mutations in patients with epilepsy. Here we compare patterns of variation in patient and public databases to test the hypothesis that regions of known functional significance within voltage-gated sodium (NaV) channels have an increased burden of deleterious variants. We assessed mutational burden in different regions of the Nav channels by (1) performing Fisher exact tests on odds ratios to infer excess variants in domains, segments, and loops of each channel in patient databases versus public "control" databases, and (2) comparing the cumulative distribution of variant sites along DNA sequences of each gene in patient and public databases (i.e., independent of protein structure). Patient variant density was concordant among channels in regions known to play a role in channel function, with statistically significant higher patient variant density in S4-S6 and DIII-DIV and an excess of public variants in SI-S3, DI-DII, DII-DIII. On the other hand, channel-specific patterns of patient burden were found in the NaV1.6 inactivation gate and NaV1.1 S5-S6 linkers, while NaV1.2 and NaV1.6 S4-S5 linkers and S5 segments shared patient variant patterns that contrasted with those in NaV1.1. These different patterns may reflect different roles played by the NaV1.6 inactivation gate in action potential propagation, and by NaV1.1 S5-S6 linkers in loss of function and haploinsufficiency. Interestingly, NaV1.2 and NaV1.6 both lack amino acid substitutions over significantly long stretches in both the patient and public databases suggesting that new mutations in these regions may cause embryonic lethality or a non-epileptic disease phenotype.

摘要

在引发中枢神经系统动作电位的四个电压门控钠离子通道中,已鉴定出与儿童癫痫相关的变异体。先前的研究主要集中在这些通道中研究最多的通道(NaV1.1、NaV1.2 和 NaV1.6)内特定变异的功能影响;然而,在癫痫患者中,跨通道进行比较研究以推断突变影响的情况较少。在这里,我们比较了患者和公共数据库中的变异模式,以检验以下假设:在电压门控钠离子(NaV)通道的已知功能重要区域中,有害变异的负担增加。我们通过以下两种方法评估了 Nav 通道不同区域的突变负担:(1)通过在患者数据库与公共“对照”数据库中对每个通道的域、片段和环的优势比进行 Fisher 精确检验,推断出这些区域的多余变异;(2)比较每个基因的 DNA 序列中变体位点的累积分布,即在不考虑蛋白质结构的情况下比较。在已知对通道功能起作用的区域中,患者变异体密度在通道之间是一致的,S4-S6 和 DIII-DIV 区域的患者变异体密度具有统计学意义上的显著增加,而 SI-S3、DI-DII、DII-DIII 区域的公共变体则过多。另一方面,在 NaV1.6 失活门和 NaV1.1 S5-S6 接头中发现了通道特异性的患者负担模式,而 NaV1.2 和 NaV1.6 S4-S5 接头和 S5 片段则具有与 NaV1.1 相反的患者变异模式。这些不同的模式可能反映了 NaV1.6 失活门在动作电位传播中的不同作用,以及 NaV1.1 S5-S6 接头在功能丧失和单倍不足中的不同作用。有趣的是,NaV1.2 和 NaV1.6 在患者和公共数据库中都缺乏显著长片段的氨基酸替换,这表明这些区域的新突变可能导致胚胎致死或非癫痫疾病表型。

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