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单个氧化铟锡纳米晶体的电子束红外纳米椭偏测量法

Electron Beam Infrared Nano-Ellipsometry of Individual Indium Tin Oxide Nanocrystals.

作者信息

Olafsson Agust, Busche Jacob A, Araujo Jose J, Maiti Arpan, Idrobo Juan Carlos, Gamelin Daniel R, Masiello David J, Camden Jon P

机构信息

Department of Chemistry and Biochemistry, University of Notre Dame, Notre Dame, Indiana 46556, United States.

Department of Chemistry, University of Washington, Seattle, Washington 98195, United States.

出版信息

Nano Lett. 2020 Nov 11;20(11):7987-7994. doi: 10.1021/acs.nanolett.0c02772. Epub 2020 Sep 14.

Abstract

Leveraging recent advances in electron energy monochromation and aberration correction, we record the spatially resolved infrared plasmon spectrum of individual tin-doped indium oxide nanocrystals using electron energy-loss spectroscopy (EELS). Both surface and bulk plasmon responses are measured as a function of tin doping concentration from 1-10 atomic percent. These results are compared to theoretical models, which elucidate the spectral detuning of the same surface plasmon resonance feature when measured from aloof and penetrating probe geometries. We additionally demonstrate a unique approach to retrieving the fundamental dielectric parameters of individual semiconductor nanocrystals via EELS. This method, devoid from ensemble averaging, illustrates the potential for electron-beam ellipsometry measurements on materials that cannot be prepared in bulk form or as thin films.

摘要

利用电子能量单色化和像差校正方面的最新进展,我们使用电子能量损失谱(EELS)记录了单个锡掺杂氧化铟纳米晶体的空间分辨红外等离子体光谱。测量了表面和体等离子体响应随锡掺杂浓度从1至10原子百分比的变化。将这些结果与理论模型进行比较,这些模型阐明了从远距离和穿透式探针几何结构测量时相同表面等离子体共振特征的光谱失谐。我们还展示了一种通过EELS获取单个半导体纳米晶体基本介电参数的独特方法。这种无需系综平均的方法,展示了对无法制备成块状或薄膜形式的材料进行电子束椭偏测量的潜力。

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