Bai Biao, Dang Peipei, Huang Dayu, Lian Hongzhou, Lin Jun
School of Applied Physics and Materials, Wuyi University, Jiangmen, Guangdong 529020, People's Republic of China.
State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, People's Republic of China.
Inorg Chem. 2020 Sep 21;59(18):13481-13488. doi: 10.1021/acs.inorgchem.0c01890. Epub 2020 Sep 2.
In recent years, the demand for near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) has increased rapidly, leading to more and more attention being paid to the research of broad-band near-infrared phosphors. In this work, Cr-doped CaLuScGaGeO (CLSGG:Cr) phosphors with broad-band NIR emission were prepared through traditional high-temperature solid-state reactions. The crystal structures of the phosphors were analyzed by X-ray diffraction (XRD) and Rietveld refinement. The photoluminescence excitation (PLE) spectra of the synthesized CLSGG:Cr phosphors exhibit a strong absorption band in the 400-500 nm region, which matches well with a blue-light-emitting chip. The photoluminescence (PL) spectra of the phosphors show broad-band emission ranging from 650 to 1100 nm with a full width at half-maximum (fwhm) of about 150 nm. At 423 K, the integrated emission intensity of CLSGG:0.02Cr is about 59% of that at room temperature. A NIR pc-LED device was fabricated by combining a mixture of as-synthesized CLSGG:0.02Cr phosphor and silicone with a 460 nm blue-light-emitting chip. Under a driving current of 100 mA, the output power of the device can achieve 1.213 mW, indicating that the as-prepared phosphors are promising for NIR pc-LED applications.
近年来，近红外磷光转换发光二极管（NIR pc-LEDs）的需求迅速增长，使得宽带近红外磷光体的研究受到越来越多的关注。在本工作中，通过传统高温固相反应制备了具有宽带近红外发射的Cr掺杂CaLuScGaGeO（CLSGG:Cr）磷光体。通过X射线衍射（XRD）和Rietveld精修分析了磷光体的晶体结构。合成的CLSGG:Cr磷光体的光致发光激发（PLE）光谱在400 - 500 nm区域呈现出强吸收带，这与蓝光发光芯片匹配良好。磷光体的光致发光（PL）光谱显示出650至1100 nm的宽带发射，半高宽（fwhm）约为150 nm。在423 K时，CLSGG:0.02Cr的积分发射强度约为室温下的59%。通过将合成的CLSGG:0.02Cr磷光体与硅酮的混合物与460 nm蓝光发光芯片组合制备了一个NIR pc-LED器件。在100 mA的驱动电流下，该器件的输出功率可达1.213 mW，表明所制备的磷光体在NIR pc-LED应用方面具有潜力。
