一种用于夜视成像的新型宽带近红外发射 MgAlSiO:Cr 荧光粉。
A new broadband near-infrared emitting MgAlSiO:Cr phosphor for night-vision imaging.
机构信息
College of Rare Earths, Jiangxi University of Science and Technology, Ganzhou 341000, PR China.
Key Laboratory of Rare Earth Luminescence Materials and Devices of Jiangxi Province, Jiangxi University of Science and Technology, Ganzhou 341000, PR China.
出版信息
Dalton Trans. 2022 Aug 23;51(33):12576-12584. doi: 10.1039/d2dt01384c.
Phosphor-converted light-emitting diodes (pc-LEDs) have important applications in security surveillance and food testing. However, developing new broadband near-infrared phosphors remains an important issue. Herein, the high-temperature solid-state reaction method was applied to synthesize a new type of Cr doped MgAlSiO broadband NIR phosphor which matches a blue LED chip. It exhibits a broadband near-infrared (NIR) phosphor emission with a focus of 856 nm and a full width at half maximum >200 nm after excitation at 453 nm. The optimum concentration of Cr was established to contain 2 mol%. At 398 K, the luminescence intensity is 45.2% of that at 298 K. The power output of NIR pc-LEDs fabricated by incorporating a 450 nm chip and the MgAlSiO:0.02 Cr phosphor is 19.69 mW at 300 mA current. Finally, the developed NIR pc-LED shows significant potential for use in night-vision imaging.
磷光转换发光二极管（pc-LED）在安全监控和食品检测等领域有重要应用。然而，开发新型宽带近红外荧光粉仍是一个重要问题。在此，我们采用高温固态反应法合成了一种新型 Cr 掺杂 MgAlSiO 宽带近红外荧光粉，该荧光粉可与蓝色 LED 芯片匹配。在 453nm 激发下，该荧光粉表现出以 856nm 为中心、半峰宽大于 200nm 的宽带近红外发射。当 Cr 的最佳掺杂浓度为 2mol%时，在 398K 下的发光强度为 298K 下的 45.2%。在 300mA 电流下，将 450nm 芯片与 MgAlSiO:0.02Cr 荧光粉组合制成的近红外 pc-LED 的功率输出为 19.69mW。最后，所开发的近红外 pc-LED 在夜视成像方面具有显著的应用潜力。
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