Mosey Aaron, Dale Ashley S, Hao Guanhua, N'Diaye Alpha, Dowben Peter A, Cheng Ruihua
Department of Physics, Indiana University-Purdue University Indianapolis, Indianapolis, Indiana 46202, United States.
Department of Physics and Astronomy, University of Nebraska Lincoln, Lincoln, Nebraska 68588, United States.
J Phys Chem Lett. 2020 Oct 1;11(19):8231-8237. doi: 10.1021/acs.jpclett.0c02209. Epub 2020 Sep 16.
Voltage-controlled nonvolatile isothermal spin state switching of a [Fe{HB(pz)}(bipy)] (pz = tris(pyrazol-1-1y)-borohydride, bipy = 2,2'-bipyridine) film, more than 40 to 50 molecular layers thick, is possible when it is adsorbed onto a molecular ferroelectric substrate. Accompanying this high-spin and low-spin state switching, at room temperature, we observe a remarkable change in conductance, thereby allowing not only nonvolatile voltage control of the spin state ("write") but also current sensing of the molecular spin state ("read"). Monte Carlo Ising model simulations of the high-spin state occupancy, extracted from X-ray absorption spectroscopy, indicate that the energy difference between the low-spin and high-spin state is modified by 110 meV. Transport measurements demonstrate that four terminal voltage-controlled devices can be realized using this system.
当[Fe{HB(pz)}(bipy)]（pz = 三（吡唑 - 1 - 基）硼氢化物，bipy = 2,2'-联吡啶）薄膜吸附到分子铁电衬底上时，对于厚度超过40至50个分子层的该薄膜，电压控制的非易失性等温自旋态切换是可能的。伴随着这种高自旋和低自旋态切换，在室温下，我们观察到电导有显著变化，从而不仅允许对自旋态进行非易失性电压控制（“写入”），还能对分子自旋态进行电流传感（“读取”）。从X射线吸收光谱提取的高自旋态占有率的蒙特卡罗伊辛模型模拟表明，低自旋态和高自旋态之间的能量差被改变了110毫电子伏特。输运测量表明，使用该系统可以实现四端电压控制装置。
