多孔硅气体传感器：层厚度和硅电导率的作用。

Porous Silicon Gas Sensors: The Role of the Layer Thickness and the Silicon Conductivity.

作者信息

Ramírez-González Francisco, García-Salgado Godofredo, Rosendo Enrique, Díaz Tomás, Nieto-Caballero Fabiola, Coyopol Antonio, Romano Román, Luna Alberto, Monfil Karim, Gastellou Erick

机构信息

Centro de Investigación en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla, 14 sur y Av. San Claudio, Puebla 72570, Mexico.

Facultad de Ciencias Químicas, Benemérita Universidad Autónoma de Puebla, 14 sur y Av. San Claudio, Puebla 72570, Mexico.

出版信息

Sensors (Basel). 2020 Sep 1;20(17):4942. doi: 10.3390/s20174942.

DOI:10.3390/s20174942

PMID:32882835

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7506701/

Abstract

We studied the influences of the thickness of the porous silicon layer and the conductivity type on the porous silicon sensors response when exposed to ethanol vapor. The response was determined at room temperature (27 ∘C) in darkness using a horizontal aluminum electrode pattern. The results indicated that the intensity of the response can be directly or inversely proportional to the thickness of the porous layer depending on the conductivity type of the semiconductor material. The response of the porous sensors was similar to the metal oxide sensors. The results can be used to appropriately select the conductivity of semiconductor materials and the thickness of the porous layer for the target gas.

摘要

我们研究了多孔硅层厚度和导电类型对多孔硅传感器暴露于乙醇蒸汽时响应的影响。使用水平铝电极图案在室温（27℃）黑暗环境中测定响应。结果表明，根据半导体材料的导电类型，响应强度与多孔层厚度可能成正比或反比。多孔传感器的响应与金属氧化物传感器相似。这些结果可用于为目标气体适当选择半导体材料的电导率和多孔层的厚度。