Chen Jindong, Lin Chensheng, Zhao Dan, Luo Min, Peng Guang, Li Bingxuan, Yang Shunda, Sun Yingshuang, Ye Ning
Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.
University of the Chinese Academy of Sciences, Beijing, 100049, China.
Angew Chem Int Ed Engl. 2020 Dec 21;59(52):23549-23553. doi: 10.1002/anie.202010319. Epub 2020 Oct 15.
To design pnictide nonlinear optical materials with wide band gap and large second-harmonic generation, the heavy halogen I was introduced into pnictides through anionic aliovalent substitution with diamond-like ZnS as templates. Thus, four excellent halopnictide-based infrared nonlinear optical crystals, M PnI (M =Zn, Cd; Pn=P, As), were obtained. They all exhibited defect diamond-like structures with highly parallel-oriented [M PnI ] mixed-anionic tetrahedral groups, leading to excellent physical properties including wide band gaps (2.38-2.85 eV), large second harmonic generation responses (2.7-5.1×AgGaS ), high laser-induced damage thresholds (5.5-10.7×AgGaS ), and good IR transparency. In particular, Cd PI and Cd AsI achieved phase-matching (Δn=0.035 and 0.031) that their template β-ZnS could not do. Anionic aliovalent substitution provides a feasible strategy to design novel promising halopnictide IR NLO materials.
为了设计具有宽带隙和大二倍频产生的磷族化物非线性光学材料,通过以类金刚石ZnS为模板进行阴离子等价替代,将重卤素I引入到磷族化物中。由此,获得了四种优异的基于卤化磷族化物的红外非线性光学晶体,M PnI(M = Zn、Cd;Pn = P、As)。它们均呈现出具有高度平行取向的[M PnI]混合阴离子四面体基团的类金刚石缺陷结构,从而导致优异的物理性能,包括宽带隙(2.38 - 2.85 eV)、大二倍频产生响应(2.7 - 5.1×AgGaS )、高激光损伤阈值(5.5 - 10.7×AgGaS )以及良好的红外透明度。特别地,Cd PI和Cd AsI实现了相位匹配(Δn = 0.035和0.031),而它们的模板β-ZnS则无法做到。阴离子等价替代为设计新型有前景的卤化磷族化物红外非线性光学材料提供了一种可行的策略。